ON Semiconductor SBC807-25WT1G
- Part Number:
- SBC807-25WT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585322-SBC807-25WT1G
- Description:
- TRANS PNP 45V 0.5A SC-70
- ECAD Model:
-
- Datasheet:
- SBC807-25WT1G
ON Semiconductor SBC807-25WT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SBC807-25WT1G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time5 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation460mW
- Base Part NumberBC807
- Pin Count3
- Power - Max460mW
- Halogen FreeHalogen Free
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)700mV
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Frequency - Transition100MHz
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SBC807-25WT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 500mA volts at its maximum.
SBC807-25WT1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
SBC807-25WT1G Applications
There are a lot of ON Semiconductor
SBC807-25WT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 500mA volts at its maximum.
SBC807-25WT1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
SBC807-25WT1G Applications
There are a lot of ON Semiconductor
SBC807-25WT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
SBC807-25WT1G More Descriptions
SBC807-25W Series PNP 45 V 0.5 A 460 mW SMT General Purpose Transistor - SC-70-3
Trans GP BJT PNP 45V 0.5A 460mW Automotive 3-Pin SC-70 T/R
TRANSISTOR, AEC-Q101, PNP, -45V, SC-70; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 460mW; DC Collector Current: -500mA; DC Current Gain hFE: 40hFE; Transistor Case Style: SC-70; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Trans GP BJT PNP 45V 0.5A 460mW Automotive 3-Pin SC-70 T/R
TRANSISTOR, AEC-Q101, PNP, -45V, SC-70; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 460mW; DC Collector Current: -500mA; DC Current Gain hFE: 40hFE; Transistor Case Style: SC-70; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to SBC807-25WT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishMax Power DissipationBase Part NumberPin CountPower - MaxHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusLead FreeSurface MountSubcategoryFrequencyNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransition FrequencyCollector Emitter Saturation VoltagehFE MinHeightLengthWidthCurrent - Collector (Ic) (Max)Transistor Element MaterialNumber of TerminationsTerminal PositionTerminal FormView Compare
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SBC807-25WT1GACTIVE (Last Updated: 1 day ago)5 WeeksSurface MountTO-236-3, SC-59, SOT-23-33-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012011e3yesActive1 (Unlimited)EAR99Tin (Sn)460mWBC8073460mWHalogen FreePNP700mV500mA160 @ 100mA 1V100nA ICBO700mV @ 50mA, 500mA45V100MHz50V5VNoROHS3 CompliantLead Free-------------------- -
ACTIVE (Last Updated: 1 day ago)5 WeeksSurface MountSC-70, SOT-3233-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012011e3yesActive1 (Unlimited)EAR99Tin (Sn)460mWBC8073-Halogen FreePNP45V500mA250 @ 100mA 1V100nA ICBO700mV @ 50mA, 500mA45V-50V-5VNoROHS3 CompliantLead FreeYESOther Transistors100MHz1Single460mW100MHzPNP100MHz-700mV250900μm2.2mm1.35mm-----
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ACTIVE (Last Updated: 1 day ago)2 WeeksSurface MountSC-70, SOT-3233-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3yesActive1 (Unlimited)EAR99Tin (Sn)150mW-3-Halogen FreeNPN45V100mA110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V-50V6VNoROHS3 CompliantLead FreeYESOther Transistors--Single-100MHzNPN100MHz250mV----100mA----
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ACTIVE (Last Updated: 1 day ago)4 WeeksSurface MountTO-236-3, SC-59, SOT-23-33-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012010e3yesActive1 (Unlimited)EAR99Tin (Sn)300mWBC8073-Halogen FreePNP45V500mA250 @ 100mA 1V100nA ICBO700mV @ 50mA, 500mA45V-50V5VNoROHS3 CompliantLead FreeYESOther Transistors100MHz1Single300mW100MHzPNP100MHz-700mV250----SILICON3DUALGULL WING
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