Cypress Semiconductor Corp S29GL256S10TFA020
- Part Number:
- S29GL256S10TFA020
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3233879-S29GL256S10TFA020
- Description:
- IC FLASH 256MBIT 100NS 56TSOP
- Datasheet:
- S29GL256S10TFA020
Cypress Semiconductor Corp S29GL256S10TFA020 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S29GL256S10TFA020.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case56-TFSOP (0.724, 18.40mm Width)
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2015
- SeriesGL-S
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Memory Size256Mb 16M x 16
- Memory TypeNon-Volatile
- Access Time100ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Write Cycle Time - Word, Page60ns
- Programming Voltage3V
- RoHS StatusROHS3 Compliant
S29GL256S10TFA020 Overview
The GL-S series, published in 2015, is a highly reliable and actively produced FLASH - NOR technology with a voltage supply range of 2.7V~3.6V. This non-volatile memory type has a moisture sensitivity level of 3, ensuring its durability for up to 168 hours. The operating temperature for this series is -40°C~85°C, making it suitable for a wide range of environments. Additionally, the packaging for these devices is in trays, providing easy handling and storage. It is worth noting that the GL-S series is also compliant with ROHS3 standards, making it environmentally friendly. Overall, this series offers top-notch performance and reliability for various applications.
S29GL256S10TFA020 Features
Package / Case: 56-TFSOP (0.724, 18.40mm Width)
S29GL256S10TFA020 Applications
There are a lot of Cypress Semiconductor Corp S29GL256S10TFA020 Memory applications.
multimedia computers
eSRAM
data buffer
Camcorders
hard disk drive (HDD)
mainframes
personal computers
personal digital assistants
networking
graphics card
The GL-S series, published in 2015, is a highly reliable and actively produced FLASH - NOR technology with a voltage supply range of 2.7V~3.6V. This non-volatile memory type has a moisture sensitivity level of 3, ensuring its durability for up to 168 hours. The operating temperature for this series is -40°C~85°C, making it suitable for a wide range of environments. Additionally, the packaging for these devices is in trays, providing easy handling and storage. It is worth noting that the GL-S series is also compliant with ROHS3 standards, making it environmentally friendly. Overall, this series offers top-notch performance and reliability for various applications.
S29GL256S10TFA020 Features
Package / Case: 56-TFSOP (0.724, 18.40mm Width)
S29GL256S10TFA020 Applications
There are a lot of Cypress Semiconductor Corp S29GL256S10TFA020 Memory applications.
multimedia computers
eSRAM
data buffer
Camcorders
hard disk drive (HDD)
mainframes
personal computers
personal digital assistants
networking
graphics card
S29GL256S10TFA020 More Descriptions
Parallel NOR Flash Memory, 256 Mbit Density, 100 ns Initial Access Time, TSOP-56, RoHSCypress Semiconductor SCT
FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 100 ns 56-TSOP
TRAY PKGED / 256 MBIT, 3V, 100NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
IC FLASH 256MBIT PARALLEL 56TSOP
FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 100 ns 56-TSOP
TRAY PKGED / 256 MBIT, 3V, 100NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
IC FLASH 256MBIT PARALLEL 56TSOP
The three parts on the right have similar specifications to S29GL256S10TFA020.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageProgramming VoltageRoHS StatusMountNumber of PinsJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishHTS CodeTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Supply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Nominal Supply CurrentOrganizationMemory WidthDensityStandby Current-MaxAccess Time (Max)Sync/AsyncAlternate Memory WidthData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyCommon Flash InterfaceHeight Seated (Max)LengthWidthRadiation HardeningSurface MountTime@Peak Reflow Temperature-Max (s)Supply Current-MaxContact PlatingSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInterfaceMax Supply VoltageMin Supply VoltageView Compare
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S29GL256S10TFA02013 WeeksSurface Mount56-TFSOP (0.724, 18.40mm Width)-40°C~85°C TATray2015GL-SActive3 (168 Hours)FLASH - NOR2.7V~3.6V256Mb 16M x 16Non-Volatile100nsFLASHParallel60ns3VROHS3 Compliant-----------------------------------------------
-
-Surface Mount64-LBGA-40°C~85°C TATray2015GL-PObsolete3 (168 Hours)FLASH - NOR2.7V~3.6V1Gb 128M x 8Non-Volatile-FLASHParallel120ns3VROHS3 CompliantSurface Mount64e0643A991.B.1.ATIN LEAD8542.32.00.51BOTTOM24013V1mm303.6V3/3.3V2.7V110mA1GX111 Gb0.000005A120 nsAsynchronous8YESYESYES1K128K8/16wordsYESYES1.4mm13mm11mmNo----------
-
-Surface Mount64-LBGA-40°C~85°C TATray2015GL-PObsolete3 (168 Hours)FLASH - NOR1.65V~3.6V1Gb 128M x 8Non-Volatile-FLASHParallel130ns3VROHS3 Compliant-64e0643A991.B.1.ATIN LEAD8542.32.00.51BOTTOM24013V1mm-3.6V1.8/3.33/3.3V2.7V-1GX111 Gb0.000005A130 ns-8YESYESYES1K128K8/16wordsYESYES1.4mm13mm11mmNoYES300.11mA-------
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-Surface Mount56-TFSOP (0.724, 18.40mm Width)-40°C~85°C TATray2016GL-PObsolete3 (168 Hours)FLASH - NOR3V~3.6V1Gb 128M x 8Non-Volatile110nsFLASHParallel110ns-ROHS3 CompliantSurface Mount56-----------------1 Gb---------------No---Tin56-TSOP85°C-40°CParallel3.6V3V
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