Toshiba Semiconductor and Storage RN4605(TE85L,F)
- Part Number:
- RN4605(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 2461874-RN4605(TE85L,F)
- Description:
- TRANS NPN/PNP PREBIAS 0.3W SM6
- Datasheet:
- RN4605(TE85L,F)
Toshiba Semiconductor and Storage RN4605(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN4605(TE85L,F).
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Number of Pins6
- PackagingCut Tape (CT)
- Published2014
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation300mW
- Reach Compliance Codeunknown
- Number of Elements2
- PolarityNPN, PNP
- Number of Channels2
- Element ConfigurationDual
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Max Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition200MHz
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- hFE Min80
- Resistor - Base (R1)2.2k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47k Ω
- RoHS StatusRoHS Compliant
RN4605(TE85L,F) Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN4605(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN4605(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN4605(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN4605(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN4605(TE85L,F) More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA 300mW 6-Pin SM T/R
TRANS NPN/PNP PREBIAS 0.3W SM6
TRANS NPN/PNP PREBIAS 0.3W SM6
The three parts on the right have similar specifications to RN4605(TE85L,F).
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Operating TemperatureMin Operating TemperatureSubcategoryMax Power DissipationReach Compliance CodeNumber of ElementsPolarityNumber of ChannelsElement ConfigurationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax FrequencyMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusFactory Lead TimeTransistor Element MaterialPower - MaxPolarity/Channel TypeRadiation HardeningView Compare
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RN4605(TE85L,F)Surface MountSurface MountSC-74, SOT-4576Cut Tape (CT)2014Discontinued1 (Unlimited)EAR99150°C-55°CBIP General Purpose Small Signal300mWunknown2NPN, PNP2Dual1 NPN, 1 PNP - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V250MHz50V200MHz50V5V802.2k Ω100mA47k ΩRoHS Compliant------
-
Surface MountSurface MountSC-74, SOT-4576Cut Tape (CT)2014Active1 (Unlimited)---BIP General Purpose Small Signal300mWunknown2NPN, PNP-Dual1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA70 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V-50V200MHz 250MHz-10V7022k Ω100mA22k ΩRoHS Compliant12 WeeksSILICON---
-
Surface MountSurface MountSC-74, SOT-457-Tape & Reel (TR)2014Active1 (Unlimited)---BIP General Purpose Small Signal300mWunknown2---1 NPN, 1 PNP - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V-50V200MHz---10k Ω-47k ΩRoHS Compliant12 WeeksSILICON300mWNPN/PNP-
-
Surface MountSurface MountSC-74, SOT-4576Cut Tape (CT)2011Active1 (Unlimited)-150°C-55°C-300mW--NPN, PNP-Dual1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA50 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V-50V200MHz-10V5010k Ω100mA10k ΩRoHS Compliant11 Weeks---No
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