Toshiba Semiconductor and Storage RN4603(TE85L,F)
- Part Number:
- RN4603(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 3584836-RN4603(TE85L,F)
- Description:
- TRANS NPN/PNP PREBIAS 0.3W SM6
- ECAD Model:
-
- Datasheet:
- RN4603(TE85L,F)
Toshiba Semiconductor and Storage RN4603(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN4603(TE85L,F).
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Number of Pins6
- Transistor Element MaterialSILICON
- PackagingCut Tape (CT)
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation300mW
- Reach Compliance Codeunknown
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- Frequency - Transition200MHz 250MHz
- Emitter Base Voltage (VEBO)10V
- hFE Min70
- Resistor - Base (R1)22k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)22k Ω
- RoHS StatusRoHS Compliant
RN4603(TE85L,F) Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN4603(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN4603(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN4603(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN4603(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN4603(TE85L,F) More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA 300mW 6-Pin SM T/R
TRANS NPN/PNP PREBIAS 0.3W SM6
PNP/NPN TRANS ARRAY -50V SM6
TRANS NPN/PNP PREBIAS 0.3W SM6
PNP/NPN TRANS ARRAY -50V SM6
The three parts on the right have similar specifications to RN4603(TE85L,F).
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryMax Power DissipationReach Compliance CodeNumber of ElementsPolarityElement ConfigurationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusECCN CodeMax Operating TemperatureMin Operating TemperatureNumber of ChannelsMax FrequencyCollector Base Voltage (VCBO)Radiation HardeningView Compare
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RN4603(TE85L,F)12 WeeksSurface MountSurface MountSC-74, SOT-4576SILICONCut Tape (CT)2014Active1 (Unlimited)BIP General Purpose Small Signal300mWunknown2NPN, PNPDual1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA70 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V200MHz 250MHz10V7022k Ω100mA22k ΩRoHS Compliant-------- -
-Surface MountSurface MountSC-74, SOT-4576-Cut Tape (CT)2014Discontinued1 (Unlimited)BIP General Purpose Small Signal300mWunknown2NPN, PNPDual1 NPN, 1 PNP - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V200MHz5V802.2k Ω100mA47k ΩRoHS CompliantEAR99150°C-55°C2250MHz50V-
-
11 WeeksSurface MountSurface MountSC-74, SOT-4576-Cut Tape (CT)2011Active1 (Unlimited)-300mW--NPN, PNPDual1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA50 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V200MHz10V5010k Ω100mA10k ΩRoHS Compliant-150°C-55°C---No
-
11 WeeksSurface MountSurface MountSC-74, SOT-457-SILICONCut Tape (CT)2014Active1 (Unlimited)BIP General Purpose Small Signal300mW-2NPN, PNPDual1 NPN, 1 PNP - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V100μA ICBO300mV @ 250μA, 5mA50V50V200MHz 250MHz5V804.7k Ω100mA47k ΩRoHS Compliant-------
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