Rohm Semiconductor QST2TR
- Part Number:
- QST2TR
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2467156-QST2TR
- Description:
- TRANS PNP 12V 6A TSMT6
- ECAD Model:
-
- Datasheet:
- QST2TR
Rohm Semiconductor QST2TR technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor QST2TR.
- Factory Lead Time20 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation1.25W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberQST
- Pin Count6
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product250MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)12V
- Max Collector Current6A
- DC Current Gain (hFE) (Min) @ Ic, Vce270 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 60mA, 3A
- Collector Emitter Breakdown Voltage12V
- Current - Collector (Ic) (Max)6A
- Transition Frequency250MHz
- Collector Base Voltage (VCBO)15V
- Emitter Base Voltage (VEBO)6V
- hFE Min270
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
QST2TR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 60mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.Collector current can be as low as 6A volts at its maximum.
QST2TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 60mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
QST2TR Applications
There are a lot of ROHM Semiconductor
QST2TR applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 60mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.Collector current can be as low as 6A volts at its maximum.
QST2TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 60mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
QST2TR Applications
There are a lot of ROHM Semiconductor
QST2TR applications of single BJT transistors.
Inverter
Interface
Driver
Muting
QST2TR More Descriptions
Trans GP BJT NPN 12V 6A 6-Pin TSMT T/R
TRANS PNP 12V 6A TSMT6
OEMs, CMs ONLY (NO BROKERS)
TRANS PNP 12V 6A TSMT6
OEMs, CMs ONLY (NO BROKERS)
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