Rohm Semiconductor QS6M3TR

Name: QS6M3TR
Brand: Rohm Semiconductor
SKU: 2847506-QS6M3TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: QS6M3TR

Manufacturer:: Rohm Semiconductor

Ventron No:: 2847506-QS6M3TR

Description:: MOSFET N/P-CH 30V/20V 1.5A TSMT6

ECAD Model:

Datasheet:: QS6M3

Specifications

Rohm Semiconductor QS6M3TR technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor QS6M3TR.

Factory Lead Time
25 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
360MOhm
Subcategory
Other Transistors
Max Power Dissipation
900mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1.5A
Time@Peak Reflow Temperature-Max (s)
10
Base Part Number
*M3
Pin Count
6
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.25W
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
230m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
80pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
1.6nC @ 4.5V
Rise Time
12ns
Drain to Source Voltage (Vdss)
30V 20V
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
12 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
1.5A
Threshold Voltage
1.5V
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
-20V
Dual Supply Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
1.5 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

QS6M3TR Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet QS6M3TR or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of QS6M3TR. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

QS6M3TR More Descriptions

Dual N/ P-Channel 30 V/20 V 1.25 W 360 mOhm Drive MosFet SMT-TSMT-6
Trans MOSFET N/P-CH Si 30V/20V 1.5A 6-Pin TSMT T/R
Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.5A; On Resistance Rds(On):0.17Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:6Pins Rohs Compliant: Yes
MOSFET, DUAL, NP, 20V/30V, 1A; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.17ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 900mW; Transistor Case Style: TSMT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 1.5A; Continuous Drain Current Id, P Channel: -1.5A; Current Id Max: 1.5A; Drain Source Voltage Vds, N Channel: 30V; Drain Source Voltage Vds, P Channel: -20V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.17ohm; On Resistance Rds(on), P Channel: 0.155ohm; Pulse Current Idm: 6A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 2.5V; Voltage Vgs th Max: 500mV; Voltage Vgs th Min: 1.5V

Certification