Fairchild/ON Semiconductor PZTA56
- Part Number:
- PZTA56
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463080-PZTA56
- Description:
- TRANS PNP 80V 0.5A SOT223
- Datasheet:
- PZTA56
Fairchild/ON Semiconductor PZTA56 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PZTA56.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight188mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation1W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-500mA
- Frequency50MHz
- Base Part NumberPZTA56
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic200mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-200mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)-80V
- Emitter Base Voltage (VEBO)-4V
- hFE Min100
- Height1.7mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PZTA56 Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -200mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -4V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 80V volts.The maximum collector current is 500mA volts.
PZTA56 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 200mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
PZTA56 Applications
There are a lot of ON Semiconductor
PZTA56 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -200mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -4V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 80V volts.The maximum collector current is 500mA volts.
PZTA56 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 200mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
PZTA56 Applications
There are a lot of ON Semiconductor
PZTA56 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PZTA56 More Descriptions
Trans GP BJT PNP 80V 0.5A 1000mW 4-Pin(3 Tab) SOT-223 T/R / TRANS PNP 80V 0.5A SOT223
Bipolar Transistors - BJT PNP Transistor General Purpose
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
1W 500mA 100@100mA1V 50MHz 250mV@100mA10mA PNP -55¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Pnp 80V Bjt Sot223 Sngl Rohs Compliant: Yes
Transistor, BIPOL, PNP, -80V, SOT-223-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power
PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
Bipolar Transistors - BJT PNP Transistor General Purpose
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
1W 500mA 100@100mA1V 50MHz 250mV@100mA10mA PNP -55¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Pnp 80V Bjt Sot223 Sngl Rohs Compliant: Yes
Transistor, BIPOL, PNP, -80V, SOT-223-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power
PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
The three parts on the right have similar specifications to PZTA56.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusConfigurationCurrent - Collector (Ic) (Max)Frequency - TransitionReach Compliance CodePin CountView Compare
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PZTA56ACTIVE (Last Updated: 2 days ago)4 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA3188mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)4EAR99Other Transistors-80V1WDUALGULL WING-500mA50MHzPZTA56R-PDSO-G41Single1WCOLLECTORAMPLIFIER50MHzPNPPNP80V500mA100 @ 100mA 1V100nA200mV @ 10mA, 100mA80V50MHz-200mV80V-80V-4V1001.7mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free------------
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ACTIVE (Last Updated: 2 days ago)15 Weeks--Surface MountTO-261-4, TO-261AA3-SILICON-55°C~150°C TJTape & Reel (TR)2017e3yesActive1 (Unlimited)3EAR99Other Transistors80V-DUALGULL WING500mA-PZTA06-1-1WCOLLECTORAMPLIFIER-NPNNPN--100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V100MHz----------ROHS3 CompliantLead FreeYESTin (Sn)8541.21.00.95NOT SPECIFIEDNOT SPECIFIEDNot QualifiedSINGLE500mA100MHz--
-
LAST SHIPMENTS (Last Updated: 2 days ago)---Surface MountTO-261-4, TO-261AA4-SILICON150°C TJCut Tape (CT)1998e0noObsolete1 (Unlimited)4EAR99Other Transistors300V1.5WDUALGULL WING500mA-PZTA42-1Single-COLLECTOR-50MHzNPNNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV300V300V6V25-----Non-RoHS CompliantContains LeadYESTin/Lead (Sn/Pb)-24530Not Qualified---not_compliant4
-
ACTIVE (Last Updated: 2 days ago)8 WeeksTin-Surface MountTO-261-4, TO-261AA44.535924gSILICON150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)4EAR99Other Transistors300V1.5WDUALGULL WING500mA50MHzPZTA42-1Single1.5WCOLLECTOR-50MHzNPNNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV300V300V6V251.57mm6.5mm3.5mmNo SVHCNoROHS3 CompliantLead FreeYES--26040-----4
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