Fairchild/ON Semiconductor PZTA14
- Part Number:
- PZTA14
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463075-PZTA14
- Description:
- TRANS NPN DARL 30V 1.2A SOT223
- Datasheet:
- PZTA14
Fairchild/ON Semiconductor PZTA14 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PZTA14.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time2 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Weight188mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation1W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating1.2A
- Base Part NumberPZTA14
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current1.2A
- DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage30V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- hFE Min20000
- Height1.6mm
- Length6.5mm
- Width3.56mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PZTA14 Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1.2A.In this part, there is a transition frequency of 125MHz.As a result, it can handle voltages as low as 30V volts.The maximum collector current is 1.2A volts.
PZTA14 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1.2A
a transition frequency of 125MHz
PZTA14 Applications
There are a lot of ON Semiconductor
PZTA14 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1.2A.In this part, there is a transition frequency of 125MHz.As a result, it can handle voltages as low as 30V volts.The maximum collector current is 1.2A volts.
PZTA14 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1.2A
a transition frequency of 125MHz
PZTA14 Applications
There are a lot of ON Semiconductor
PZTA14 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PZTA14 More Descriptions
PZTA14 Series 30 V CE Breakdown 1.2 A NPN Darlington Transistor - SOT-223
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Trans Darlington NPN 30V 1.2A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
1W 1.2A 10000@10mA5V 125MHz 1.5V@100mA100Ã×A NPN -55¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Transistor, NPN, 30V, 1.2A, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:125MHz; Power
NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
TRANSISTOR, NPN, 30V, 1.2A, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 1W; DC Collector Current: 1.2A; DC Current Gain hFE: 10000hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Trans Darlington NPN 30V 1.2A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
1W 1.2A 10000@10mA5V 125MHz 1.5V@100mA100Ã×A NPN -55¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Transistor, NPN, 30V, 1.2A, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:125MHz; Power
NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
TRANSISTOR, NPN, 30V, 1.2A, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 1W; DC Collector Current: 1.2A; DC Current Gain hFE: 10000hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to PZTA14.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingBase Part NumberJESD-30 CodeNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountNumber of PinsHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusConfigurationTransistor ApplicationPolarity/Channel TypeCurrent - Collector (Ic) (Max)Reach Compliance CodePin CountGain Bandwidth ProductContact PlatingFrequencyREACH SVHCView Compare
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PZTA14ACTIVE (Last Updated: 2 days ago)2 WeeksSurface MountSurface MountTO-261-4, TO-261AA188mgSILICON-55°C~150°C TJTape & Reel (TR)2000e3yesActive1 (Unlimited)4EAR99Tin (Sn)Other Transistors30V1WDUALGULL WING1.2APZTA14R-PDSO-G41NPNSingle1WCOLLECTORNPN - Darlington30V1.2A20000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz1.5V30V125MHz30V10V200001.6mm6.5mm3.56mmNoROHS3 CompliantLead Free-----------------
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ACTIVE (Last Updated: 2 days ago)15 Weeks-Surface MountTO-261-4, TO-261AA-SILICON-55°C~150°C TJTape & Reel (TR)2017e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors80V-DUALGULL WING500mAPZTA06-1--1WCOLLECTORNPN--100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V100MHz--100MHz-------ROHS3 CompliantLead FreeYES38541.21.00.95NOT SPECIFIEDNOT SPECIFIEDNot QualifiedSINGLEAMPLIFIERNPN500mA------
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LAST SHIPMENTS (Last Updated: 2 days ago)--Surface MountTO-261-4, TO-261AA-SILICON150°C TJCut Tape (CT)1998e0noObsolete1 (Unlimited)4EAR99Tin/Lead (Sn/Pb)Other Transistors300V1.5WDUALGULL WING500mAPZTA42-1-Single-COLLECTORNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV300V-300V6V25----Non-RoHS CompliantContains LeadYES4-24530Not Qualified--NPN-not_compliant450MHz---
-
ACTIVE (Last Updated: 2 days ago)8 Weeks-Surface MountTO-261-4, TO-261AA4.535924gSILICON150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)4EAR99-Other Transistors300V1.5WDUALGULL WING500mAPZTA42-1-Single1.5WCOLLECTORNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV300V-300V6V251.57mm6.5mm3.5mmNoROHS3 CompliantLead FreeYES4-26040---NPN--450MHzTin50MHzNo SVHC
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