Fairchild/ON Semiconductor PZT3906
- Part Number:
- PZT3906
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463089-PZT3906
- Description:
- TRANS PNP 40V 0.2A SOT223
- Datasheet:
- PZT3906
Fairchild/ON Semiconductor PZT3906 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PZT3906.
- Lifecycle StatusLIFETIME (Last Updated: 2 days ago)
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight188mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation1W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-200mA
- Frequency250MHz
- Base Part NumberPZT3906
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product250MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-40V
- Max Collector Current-200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Current - Collector (Ic) (Max)200mA
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage-400mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)-40V
- Emitter Base Voltage (VEBO)-5V
- hFE Min30
- Max Junction Temperature (Tj)150°C
- Turn On Time-Max (ton)70ns
- Height1.8mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PZT3906 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as -200mA volts at Single BJT transistors maximum.
PZT3906 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
PZT3906 Applications
There are a lot of ON Semiconductor
PZT3906 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as -200mA volts at Single BJT transistors maximum.
PZT3906 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
PZT3906 Applications
There are a lot of ON Semiconductor
PZT3906 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PZT3906 More Descriptions
Trans GP BJT PNP 40V 0.2A 1000mW 4-Pin(3 Tab) SOT-223 T/R / TRANS PNP 40V 0.2A SOT223
Bipolar Transistors - BJT PNP Transistor General Purpose
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
PZT3906 Series 40 V CE Breakdown 200 mA PNP General Purpose Amplifier SOT-223
Pnp 40V Bjt Sot223 Sngl Rohs Compliant: Yes
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP 0.2A 40V SOT223; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:1W; DC Collector Current:200mA; DC Current Gain hFE:300; Operating Temperature Range:-55°C to 150°C; RF Transistor Case:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:100mA; Gain Bandwidth ft Typ:250MHz; Package / Case:SOT-223; Termination Type:SMD; Transistor Case Style:SOT-223; Transistor Type:General Purpose
Bipolar Transistors - BJT PNP Transistor General Purpose
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
PZT3906 Series 40 V CE Breakdown 200 mA PNP General Purpose Amplifier SOT-223
Pnp 40V Bjt Sot223 Sngl Rohs Compliant: Yes
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP 0.2A 40V SOT223; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:1W; DC Collector Current:200mA; DC Current Gain hFE:300; Operating Temperature Range:-55°C to 150°C; RF Transistor Case:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:100mA; Gain Bandwidth ft Typ:250MHz; Package / Case:SOT-223; Termination Type:SMD; Transistor Case Style:SOT-223; Transistor Type:General Purpose
The three parts on the right have similar specifications to PZT3906.
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ImagePart NumberManufacturerLifecycle StatusContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)Turn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeTurn Off Time-Max (toff)Surface MountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountTerminal FinishJESD-30 CodeQualification StatusConfigurationPower - MaxCurrent - Collector Cutoff (Max)Voltage - Collector Emitter Breakdown (Max)Frequency - TransitionVCEsat-MaxCollector-Base Capacitance-MaxPower Dissipation Ambient-MaxView Compare
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PZT3906LIFETIME (Last Updated: 2 days ago)TinSurface MountSurface MountTO-261-4, TO-261AA4188mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesObsolete1 (Unlimited)4EAR99Other Transistors-40V1WDUALGULL WING-200mA250MHzPZT39061Single1WCOLLECTORSWITCHING250MHzPNPPNP-40V-200mA100 @ 10mA 1V400mV @ 5mA, 50mA40V200mA250MHz-400mV40V-40V-5V30150°C70ns1.8mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free------------------
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LAST SHIPMENTS (Last Updated: 1 day ago)TinSurface MountSurface MountTO-261-4, TO-261AA4188mgSILICON-55°C~150°C TJTape & Reel (TR)2011e3yesObsolete1 (Unlimited)4EAR99Other Transistors40V1WDUALGULL WING200mA300MHzPZT39041Single1WCOLLECTORSWITCHING300MHzNPNNPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V-300MHz300mV40V60V6V100-70ns1.7mm6.7mm3.7mmNo SVHCNoRoHS CompliantLead Free28 Weeks250ns---------------
-
ACTIVE (Last Updated: 2 days ago)Tin-Surface MountTO-261-4, TO-261AA4-SILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)4EAR99Other Transistors40V1.5WDUALGULL WING200mA300MHzPZT39041Single1.5WCOLLECTOR-300MHzNPNNPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V-300MHz300mV40V60V6V40-70ns1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free8 Weeks250nsYES260404-----------
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---Surface MountTO-261-4, TO-261AA--SILICON150°C TJTape & Reel (TR)1999e3yesObsolete1 (Unlimited)4EAR99---DUALGULL WING--PZT39061--COLLECTORSWITCHING-PNPPNP--100 @ 10mA 1V200mV @ 5mA, 50mA-100mA250MHz------65ns-----ROHS3 Compliant--300nsYESNOT SPECIFIEDNOT SPECIFIED4TINR-PDSO-G4Not QualifiedSINGLE1.05W50nA ICBO40V250MHz0.4 V4.5pF1.5W
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