PZT2222AT1G

ON Semiconductor PZT2222AT1G

Part Number:
PZT2222AT1G
Manufacturer:
ON Semiconductor
Ventron No:
2465147-PZT2222AT1G
Description:
TRANS NPN 40V 0.6A SOT223
ECAD Model:
Datasheet:
PZT2222AT1G

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Specifications
ON Semiconductor PZT2222AT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor PZT2222AT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 19 hours ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Surface Mount
    YES
  • Number of Pins
    4
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    40V
  • Max Power Dissipation
    1.5W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    600mA
  • Frequency
    300MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    PZT2222A
  • Pin Count
    4
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.5W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    300MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    40V
  • Transition Frequency
    300MHz
  • Collector Emitter Saturation Voltage
    1V
  • Max Breakdown Voltage
    40V
  • Collector Base Voltage (VCBO)
    75V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    35
  • Turn Off Time-Max (toff)
    285ns
  • Height
    1.57mm
  • Length
    6.5mm
  • Width
    3.5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PZT2222AT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.

PZT2222AT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz


PZT2222AT1G Applications
There are a lot of ON Semiconductor
PZT2222AT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
PZT2222AT1G More Descriptions
Transistor General Purpose BJT NPN 40 Volt 0.6A Automotive 4-Pin(3 Tab) SOT-223
Transistor, Bipolar,Si,NPN,Switching,VCEO 40VDC,IC 600mA,PD 1.5W,SOT-223,hFE 40
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
PZT2222A Series 40 V 600 mA NPN Silicon Planar Epitaxial Transistor - SOT-223
Bipolar Transistors - BJT 600mA 75V NPN
Trans GP BJT NPN 40V 0.6A 4-Pin(3 Tab) SOT-223 T/R - Product that comes on tape, but is not reeled (
TRANSISTOR, NPN, 40V, 600MA, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 600mA; DC Current Gain hFE: 35hFE; T
This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 600 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 35 / Collector-Base Voltage (Vcbo) V = 75 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) W = 1.5 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2 / Reflow Temperature Max. °C = 260
Product Comparison
The three parts on the right have similar specifications to PZT2222AT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Turn Off Time-Max (toff)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Voltage
    Current
    Turn On Time-Max (ton)
    Series
    Terminal Finish
    JESD-30 Code
    Qualification Status
    Polarity
    Configuration
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    VCEsat-Max
    Collector-Base Capacitance-Max
    View Compare
  • PZT2222AT1G
    PZT2222AT1G
    ACTIVE (Last Updated: 19 hours ago)
    8 Weeks
    Tin
    Surface Mount
    TO-261-4, TO-261AA
    YES
    4
    4.535924g
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    Other Transistors
    40V
    1.5W
    DUAL
    GULL WING
    260
    600mA
    300MHz
    40
    PZT2222A
    4
    1
    Single
    1.5W
    COLLECTOR
    SWITCHING
    300MHz
    NPN
    NPN
    40V
    600mA
    100 @ 150mA 10V
    10nA ICBO
    1V @ 50mA, 500mA
    40V
    300MHz
    1V
    40V
    75V
    6V
    35
    285ns
    1.57mm
    6.5mm
    3.5mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PZT2907AT1G
    ACTIVE (Last Updated: 3 days ago)
    8 Weeks
    Tin
    Surface Mount
    TO-261-4, TO-261AA
    YES
    4
    4.535924g
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    Other Transistors
    -60V
    1.5W
    DUAL
    GULL WING
    260
    -600mA
    200MHz
    40
    PZT2907A
    4
    1
    Single
    1.5W
    COLLECTOR
    SWITCHING
    200MHz
    PNP
    PNP
    60V
    600mA
    100 @ 150mA 10V
    10nA ICBO
    1.6V @ 50mA, 500mA
    60V
    200MHz
    -1.6V
    60V
    60V
    5V
    100
    -
    1.651mm
    6.6802mm
    3.7084mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PZT2222A
    LAST SHIPMENTS (Last Updated: 3 days ago)
    27 Weeks
    Tin
    Surface Mount
    TO-261-4, TO-261AA
    -
    4
    188.014037mg
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Obsolete
    1 (Unlimited)
    4
    EAR99
    Other Transistors
    40V
    1W
    DUAL
    GULL WING
    -
    1A
    300MHz
    -
    PZT2222A
    4
    1
    Single
    1W
    COLLECTOR
    SWITCHING
    300MHz
    NPN
    NPN
    40V
    1A
    100 @ 150mA 10V
    10nA ICBO
    1V @ 50mA, 500mA
    40V
    300MHz
    1V
    40V
    75V
    6V
    100
    285ns
    1.7mm
    6.7mm
    3.7mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    Surface Mount
    40V
    8A
    35ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PZT2222A,115
    -
    4 Weeks
    -
    Surface Mount
    TO-261-4, TO-261AA
    YES
    3
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2009
    e3
    -
    Active
    1 (Unlimited)
    4
    EAR99
    -
    -
    -
    DUAL
    GULL WING
    NOT SPECIFIED
    -
    -
    NOT SPECIFIED
    PZT2222A
    4
    1
    -
    1.15W
    COLLECTOR
    SWITCHING
    -
    -
    NPN
    -
    -
    100 @ 150mA 10V
    10nA ICBO
    1V @ 50mA, 500mA
    -
    300MHz
    -
    -
    -
    -
    -
    250ns
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    Automotive, AEC-Q101
    Tin (Sn)
    R-PDSO-G4
    Not Qualified
    NPN, PNP
    SINGLE
    40V
    600mA
    300MHz
    1 V
    8pF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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