ON Semiconductor PZT2222AT1G
- Part Number:
- PZT2222AT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465147-PZT2222AT1G
- Description:
- TRANS NPN 40V 0.6A SOT223
- Datasheet:
- PZT2222AT1G
ON Semiconductor PZT2222AT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor PZT2222AT1G.
- Lifecycle StatusACTIVE (Last Updated: 19 hours ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Number of Pins4
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation1.5W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating600mA
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPZT2222A
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.5W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min35
- Turn Off Time-Max (toff)285ns
- Height1.57mm
- Length6.5mm
- Width3.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PZT2222AT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
PZT2222AT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
PZT2222AT1G Applications
There are a lot of ON Semiconductor
PZT2222AT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
PZT2222AT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
PZT2222AT1G Applications
There are a lot of ON Semiconductor
PZT2222AT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PZT2222AT1G More Descriptions
Transistor General Purpose BJT NPN 40 Volt 0.6A Automotive 4-Pin(3 Tab) SOT-223
Transistor, Bipolar,Si,NPN,Switching,VCEO 40VDC,IC 600mA,PD 1.5W,SOT-223,hFE 40
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
PZT2222A Series 40 V 600 mA NPN Silicon Planar Epitaxial Transistor - SOT-223
Bipolar Transistors - BJT 600mA 75V NPN
Trans GP BJT NPN 40V 0.6A 4-Pin(3 Tab) SOT-223 T/R - Product that comes on tape, but is not reeled (
TRANSISTOR, NPN, 40V, 600MA, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 600mA; DC Current Gain hFE: 35hFE; T
This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 600 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 35 / Collector-Base Voltage (Vcbo) V = 75 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) W = 1.5 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2 / Reflow Temperature Max. °C = 260
Transistor, Bipolar,Si,NPN,Switching,VCEO 40VDC,IC 600mA,PD 1.5W,SOT-223,hFE 40
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
PZT2222A Series 40 V 600 mA NPN Silicon Planar Epitaxial Transistor - SOT-223
Bipolar Transistors - BJT 600mA 75V NPN
Trans GP BJT NPN 40V 0.6A 4-Pin(3 Tab) SOT-223 T/R - Product that comes on tape, but is not reeled (
TRANSISTOR, NPN, 40V, 600MA, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 600mA; DC Current Gain hFE: 35hFE; T
This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 600 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 35 / Collector-Base Voltage (Vcbo) V = 75 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) W = 1.5 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2 / Reflow Temperature Max. °C = 260
The three parts on the right have similar specifications to PZT2222AT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountVoltageCurrentTurn On Time-Max (ton)SeriesTerminal FinishJESD-30 CodeQualification StatusPolarityConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionVCEsat-MaxCollector-Base Capacitance-MaxView Compare
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PZT2222AT1GACTIVE (Last Updated: 19 hours ago)8 WeeksTinSurface MountTO-261-4, TO-261AAYES44.535924gSILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)4EAR99Other Transistors40V1.5WDUALGULL WING260600mA300MHz40PZT2222A41Single1.5WCOLLECTORSWITCHING300MHzNPNNPN40V600mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V300MHz1V40V75V6V35285ns1.57mm6.5mm3.5mmNo SVHCNoROHS3 CompliantLead Free----------------
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ACTIVE (Last Updated: 3 days ago)8 WeeksTinSurface MountTO-261-4, TO-261AAYES44.535924gSILICON-65°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)4EAR99Other Transistors-60V1.5WDUALGULL WING260-600mA200MHz40PZT2907A41Single1.5WCOLLECTORSWITCHING200MHzPNPPNP60V600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA60V200MHz-1.6V60V60V5V100-1.651mm6.6802mm3.7084mmNo SVHCNoROHS3 CompliantLead Free---------------
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LAST SHIPMENTS (Last Updated: 3 days ago)27 WeeksTinSurface MountTO-261-4, TO-261AA-4188.014037mgSILICON150°C TJTape & Reel (TR)2007e3yesObsolete1 (Unlimited)4EAR99Other Transistors40V1WDUALGULL WING-1A300MHz-PZT2222A41Single1WCOLLECTORSWITCHING300MHzNPNNPN40V1A100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V300MHz1V40V75V6V100285ns1.7mm6.7mm3.7mmNo SVHCNoRoHS CompliantLead FreeSurface Mount40V8A35ns-----------
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-4 Weeks-Surface MountTO-261-4, TO-261AAYES3-SILICON150°C TJTape & Reel (TR)2009e3-Active1 (Unlimited)4EAR99---DUALGULL WINGNOT SPECIFIED--NOT SPECIFIEDPZT2222A41-1.15WCOLLECTORSWITCHING--NPN--100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA-300MHz-----250ns-----ROHS3 Compliant-----Automotive, AEC-Q101Tin (Sn)R-PDSO-G4Not QualifiedNPN, PNPSINGLE40V600mA300MHz1 V8pF
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