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Infineon Technologies PXAC201202FCV2R0XTMA1
- Part Number:
- PXAC201202FCV2R0XTMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2477661-PXAC201202FCV2R0XTMA1
- Description:
- IC AMP RF LDMOS H-37248-4
- ECAD Model:
-
- Datasheet:
- PXAC201202FCV2R0XTMA1
Infineon Technologies PXAC201202FCV2R0XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PXAC201202FCV2R0XTMA1.
- Factory Lead Time26 Weeks
- Published2016
- Part StatusActive
- ECCN CodeEAR99
- Voltage - Rated65V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Frequency2.2GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Current - Test240mA
- Gain17 dB
- Power - Output16W
- Voltage - Test28V
- RoHS StatusRoHS Compliant
PXAC201202FCV2R0XTMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PXAC201202FCV2R0XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PXAC201202FCV2R0XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PXAC201202FCV2R0XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PXAC201202FCV2R0XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PXAC201202FCV2R0XTMA1 More Descriptions
IC AMP RF LDMOS H-37248-4
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 2200 MHz | Summary of Features: Asymmetric Doherty design: - Main = 35 W Typ (P1dB) - Peak = 80 W Typ (P1dB); Broadband internal matching; CW performance in a Doherty configuration, 1805 MHz, 28 V - Output power = 100 W P1dB - Gain = 17.3 dB at 17.8 W Avg. - Efficiency = 46% at 17.8 W Avg.; CW performance in a Doherty configuration, 2100 MHz, 28 V - Output power = 15.8 W Avg. - Gain = 15.5 dB - Efficiency = 46%; Capable of handling 10:1 VSWR @ 28 V, 16 W (CW) output power; Integrated ESD protection, HBM Class 1C (per JESD22-A114); Low thermal resistance; Pb-free and RoHS-compliant
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 2200 MHz | Summary of Features: Asymmetric Doherty design: - Main = 35 W Typ (P1dB) - Peak = 80 W Typ (P1dB); Broadband internal matching; CW performance in a Doherty configuration, 1805 MHz, 28 V - Output power = 100 W P1dB - Gain = 17.3 dB at 17.8 W Avg. - Efficiency = 46% at 17.8 W Avg.; CW performance in a Doherty configuration, 2100 MHz, 28 V - Output power = 15.8 W Avg. - Gain = 15.5 dB - Efficiency = 46%; Capable of handling 10:1 VSWR @ 28 V, 16 W (CW) output power; Integrated ESD protection, HBM Class 1C (per JESD22-A114); Low thermal resistance; Pb-free and RoHS-compliant
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