Nexperia USA Inc. PUMD3,115
- Part Number:
- PUMD3,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2844417-PUMD3,115
- Description:
- TRANS PREBIAS NPN/PNP 6TSSOP
- ECAD Model:
-
- Datasheet:
- PUMD3,115
Nexperia USA Inc. PUMD3,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PUMD3,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 1
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberP*MD3
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency230MHz
- Resistor - Base (R1)10k Ω
- Resistor - Emitter Base (R2)10k Ω
- RoHS StatusROHS3 Compliant
Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMD3,115 are a type of transistor digital BJT NPN/PNP designed for automotive applications. They are a 6-pin TSSOP EP package with a maximum voltage rating of 50V and a maximum current rating of 100mA.
Features of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMD3,115 include a low saturation voltage, low power consumption, and a high switching speed. They also have a high current gain and a low noise level.
Applications of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMD3,115 include automotive power management, motor control, and lighting control. They can also be used in audio amplifiers, power supplies, and other automotive applications.
Features of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMD3,115 include a low saturation voltage, low power consumption, and a high switching speed. They also have a high current gain and a low noise level.
Applications of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMD3,115 include automotive power management, motor control, and lighting control. They can also be used in audio amplifiers, power supplies, and other automotive applications.
PUMD3,115 More Descriptions
Transistor Digital BJT NPN/PNP 50 Volt 100mA Automotive 6-Pin TSSOP
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
PUMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
PUMD3 Series 40 V 100 mA Surface Mount NPN/PNP Digital Transistor - SOT-363
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:50V; Power Dissipation, Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):30 ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: PUMD3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 150mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Full Power Rating Temperature: 25°C; Hfe Min: 30; Module Configuration: Dual; No. of Pins: 6Pins; No. of Transistors: 2; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Pd: 200mW; Power Dissipation Ptot Max: 300mW; Resistance R1: 10kohm; Resistance R2: 10kohm; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
PUMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
PUMD3 Series 40 V 100 mA Surface Mount NPN/PNP Digital Transistor - SOT-363
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:50V; Power Dissipation, Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):30 ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: PUMD3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 150mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Full Power Rating Temperature: 25°C; Hfe Min: 30; Module Configuration: Dual; No. of Pins: 6Pins; No. of Transistors: 2; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Pd: 200mW; Power Dissipation Ptot Max: 300mW; Resistance R1: 10kohm; Resistance R2: 10kohm; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP
The three parts on the right have similar specifications to PUMD3,115.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityConfigurationPower - MaxTransistor ApplicationTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyResistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusJESD-30 CodePolarity/Channel TypeMountMax Operating TemperatureMin Operating TemperatureMax Power DissipationElement ConfigurationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageRadiation HardeningLead FreeView Compare
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PUMD3,1154 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6SILICONTape & Reel (TR)2013e3Active1 (Unlimited)6EAR99Tin (Sn)BUILT IN BIAS RESISTANCE RATIO IS 1GULL WING26030P*MD362NPN, PNPSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)30 @ 5mA 5V1μA150mV @ 500μA, 10mA50V100mA230MHz10k Ω10k ΩROHS3 Compliant------------- -
4 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES-SILICONTape & Reel (TR)2005e3Active1 (Unlimited)6EAR99Tin (Sn)BUILT IN BIAS RESISTORGULL WING26030MD1462-SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)100 @ 1mA 5V1μA150mV @ 500μA, 10mA50V100mA-47k Ω-ROHS3 CompliantR-PDSO-G6NPN AND PNP----------
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4 WeeksSurface Mount6-TSSOP, SC-88, SOT-363-6-Tape & Reel (TR)2011e3Active1 (Unlimited)6EAR99Tin (Sn)BUILT IN BIAS RESISTANCE RATIO IS 1GULL WING26030MD262NPN, PNP--SWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)60 @ 5mA 5V1μA150mV @ 500μA, 10mA---22k Ω22k ΩROHS3 Compliant--Surface Mount150°C-65°C300mWDual50V100mA50VNoLead Free
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4 WeeksSurface Mount6-TSSOP, SC-88, SOT-363-6-Tape & Reel (TR)2005e3Active1 (Unlimited)6EAR99Tin (Sn)BUILT IN BIAS RESISTOR RATIO 1GULL WING26030-62NPN, PNP--SWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)80 @ 5mA 5V1μA150mV @ 250μA, 5mA---100k Ω100k ΩROHS3 Compliant--Surface Mount150°C-65°C300mWDual50V20mA50VNoLead Free
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