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PUMD2,165

Nexperia USA Inc. PUMD2,165

Part Number:
PUMD2,165
Manufacturer:
Nexperia USA Inc.
Ventron No:
3068453-PUMD2,165
Description:
TRANS PREBIAS NPN/PNP 6TSSOP
ECAD Model:
Datasheet:
PUMD2,165

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Specifications
Nexperia USA Inc. PUMD2,165 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PUMD2,165.
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    BUILT IN BIAS RESISTANCE RATIO IS 1
  • Max Power Dissipation
    300mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MD2
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    NPN, PNP
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 5mA 5V
  • Current - Collector Cutoff (Max)
    1μA
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 500μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Resistor - Base (R1)
    22k Ω
  • Resistor - Emitter Base (R2)
    22k Ω
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMD2,165 are a series of pre-biased transistors designed for use in a variety of applications. These transistors are available in a 6-pin TSSOP package and feature a NPN/PNP configuration. They are designed to provide a high level of performance and reliability in a wide range of applications.

Features of Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMD2,165 include:
• Low saturation voltage
• High current gain
• Low noise
• High switching speed
• High temperature stability
• Low power consumption
• High reliability

Applications of Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMD2,165 include:
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
• Medical
• Aerospace
• Power management
• Lighting
• Security systems
PUMD2,165 More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA 300mW Automotive 6-Pin TSSOP T/R
PUMD2 Series 50 V 100 mA NPN/PNP Resistor-Equipped Transistor - TSSOP-6
PEMD2; PIMD2; PUMD2 - NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
BRT TRANSISTOR, 50V, 22K/22K, SOT-363-6; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: -; RF Transi
Product Comparison
The three parts on the right have similar specifications to PUMD2,165.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Resistor - Base (R1)
    Resistor - Emitter Base (R2)
    Radiation Hardening
    RoHS Status
    Lead Free
    Transition Frequency
    Surface Mount
    Transistor Element Material
    JESD-30 Code
    Configuration
    Power - Max
    Polarity/Channel Type
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    HTS Code
    View Compare
  • PUMD2,165
    PUMD2,165
    Nexperia USA Inc.
    4 Weeks
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    Tape & Reel (TR)
    2011
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -65°C
    BUILT IN BIAS RESISTANCE RATIO IS 1
    300mW
    GULL WING
    260
    30
    MD2
    6
    2
    NPN, PNP
    Dual
    SWITCHING
    1 NPN, 1 PNP - Pre-Biased (Dual)
    50V
    100mA
    60 @ 5mA 5V
    1μA
    150mV @ 500μA, 10mA
    50V
    22k Ω
    22k Ω
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PUMD10,125
    PUMD10,125
    Nexperia USA Inc.
    4 Weeks
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    Tape & Reel (TR)
    2011
    e3
    Active
    1 (Unlimited)
    6
    -
    Tin (Sn)
    150°C
    -65°C
    BUILT-IN BIAS RESISTOR RATIO IS 21
    200mW
    GULL WING
    -
    -
    MD10
    6
    2
    NPN, PNP
    Dual
    SWITCHING
    1 NPN, 1 PNP - Pre-Biased (Dual)
    50V
    100mA
    100 @ 10mA 5V
    1μA
    100mV @ 250μA, 5mA
    50V
    2.2k Ω
    47k Ω
    No
    ROHS3 Compliant
    Lead Free
    230MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PUMD2,165 vs PUMD10,125
  • PUMD14,115
    PUMD14,115
    Nexperia USA Inc.
    4 Weeks
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    Tape & Reel (TR)
    2005
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    -
    -
    BUILT IN BIAS RESISTOR
    -
    GULL WING
    260
    30
    MD14
    6
    2
    -
    -
    SWITCHING
    1 NPN, 1 PNP - Pre-Biased (Dual)
    -
    -
    100 @ 1mA 5V
    1μA
    150mV @ 500μA, 10mA
    -
    47k Ω
    -
    -
    ROHS3 Compliant
    -
    -
    YES
    SILICON
    R-PDSO-G6
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    300mW
    NPN AND PNP
    50V
    100mA
    -
    PUMD2,165 vs PUMD14,115
  • PUMD48,115
    PUMD48,115
    Nexperia USA Inc.
    4 Weeks
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    Tape & Reel (TR)
    2004
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    -
    -
    -
    -
    GULL WING
    260
    30
    P*MD48
    6
    2
    NPN, PNP
    -
    SWITCHING
    1 NPN, 1 PNP - Pre-Biased (Dual)
    -
    -
    80 @ 5mA 5V / 100 @ 10mA 5V
    1μA
    150mV @ 500μA, 10mA / 100mV @ 250μA, 5mA
    -
    47k Ω, 2.2k Ω
    47k Ω
    -
    ROHS3 Compliant
    -
    -
    YES
    SILICON
    -
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    300mW
    -
    50V
    100mA
    8541.21.00.95
    PUMD2,165 vs PUMD48,115
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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