Nexperia USA Inc. PUMD10,125
- Part Number:
- PUMD10,125
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3584876-PUMD10,125
- Description:
- TRANS PREBIAS NPN/PNP 6TSSOP
- ECAD Model:
-
- Datasheet:
- PUMD10,125
Nexperia USA Inc. PUMD10,125 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PUMD10,125.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 21
- Max Power Dissipation200mW
- Terminal FormGULL WING
- Base Part NumberMD10
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic100mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency230MHz
- Resistor - Base (R1)2.2k Ω
- Resistor - Emitter Base (R2)47k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PUMD10,125 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PUMD10,125 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PUMD10,125. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PUMD10,125 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PUMD10,125. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PUMD10,125 More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin TSSOP T/R
PUMD10 - NPN/PNP double Resistor-Equipped Transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
PUMD10 Series 50 V 100 mA NPN/PNP Resistor-Equipped Transistor - SOT-363
PUMD10 - NPN/PNP double Resistor-Equipped Transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
PUMD10 Series 50 V 100 mA NPN/PNP Resistor-Equipped Transistor - SOT-363
The three parts on the right have similar specifications to PUMD10,125.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureMax Power DissipationTerminal FormBase Part NumberPin CountNumber of ElementsPolarityElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyResistor - Base (R1)Resistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialECCN CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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PUMD10,1254 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636Tape & Reel (TR)2011e3Active1 (Unlimited)6Tin (Sn)150°C-65°CBUILT-IN BIAS RESISTOR RATIO IS 21200mWGULL WINGMD1062NPN, PNPDualSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA100 @ 10mA 5V1μA100mV @ 250μA, 5mA50V230MHz2.2k Ω47k ΩNoROHS3 CompliantLead Free------------ -
4 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363-Tape & Reel (TR)2005e3Active1 (Unlimited)6Tin (Sn)--BUILT IN BIAS RESISTOR-GULL WINGMD1462--SWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)--100 @ 1mA 5V1μA150mV @ 500μA, 10mA--47k Ω--ROHS3 Compliant-YESSILICONEAR9926030R-PDSO-G6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mWNPN AND PNP50V100mA
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4 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636Tape & Reel (TR)2011e3Active1 (Unlimited)6Tin (Sn)150°C-65°CBUILT IN BIAS RESISTANCE RATIO IS 1300mWGULL WINGMD262NPN, PNPDualSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA60 @ 5mA 5V1μA150mV @ 500μA, 10mA50V-22k Ω22k ΩNoROHS3 CompliantLead Free--EAR9926030------
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4 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636Tape & Reel (TR)2005e3Active1 (Unlimited)6Tin (Sn)150°C-65°CBUILT IN BIAS RESISTOR RATIO 1300mWGULL WING-62NPN, PNPDualSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V20mA80 @ 5mA 5V1μA150mV @ 250μA, 5mA50V-100k Ω100k ΩNoROHS3 CompliantLead Free--EAR9926030------
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