PTFC270051MV2R1KXUMA1

Infineon Technologies PTFC270051MV2R1KXUMA1

Part Number:
PTFC270051MV2R1KXUMA1
Manufacturer:
Infineon Technologies
Ventron No:
3585857-PTFC270051MV2R1KXUMA1
Description:
IC AMP RF LDMOS
ECAD Model:
Datasheet:
PTFC270051MV2R1KXUMA1

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Specifications
Infineon Technologies PTFC270051MV2R1KXUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PTFC270051MV2R1KXUMA1.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Number of Pins
    10
  • Published
    2009
  • JESD-609 Code
    e4
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Max Operating Temperature
    225°C
  • Min Operating Temperature
    -65°C
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Supply Voltage
    28V
  • Halogen Free
    Halogen Free
  • Gate to Source Voltage (Vgs)
    10V
  • Gain
    19.5 dB
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
PTFC270051MV2R1KXUMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFC270051MV2R1KXUMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFC270051MV2R1KXUMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PTFC270051MV2R1KXUMA1 More Descriptions
LDMOS FET, High Power RF, 5W, 28V, 0.90-2.70GHz, PG-SON-10 Pkg, T/R 1k
Trans MOSFET N-CH 65V 10-Pin SON T/R
PTFC270051MV2R1KXUMA1 Infineon Technologies
High Power RF LDMOS FET, 5 W, 28 V, 900 2700 MHz | Summary of Features: Unmatched; Typical CW performance, 940 MHz, 28 V - Output power (P1dB) = 6.5 W - Gain = 23 dB - Efficiency = 62%; Typical CW performance, 2170 MHz, 28 V - Output power (P1dB) = 7.3 W - Gain = 20.3 dB - Efficiency = 60%; Typical CW performance, 2655 MHz, 28 V Output power (P1dB) = 7.3 W - Gain = 19.9 dB - Efficiency = 59.5%; Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power; Integrated ESD protection: Human Body Model Class 1A (per JESD22-A114); Pb-free and RoHS compliant; Evaluation boards available : LTN/PTFC270051M V2 2110 to 2170 MHz LTN/PTFC270051M E3 2620 to 2690 MHz LTN/PTFC270051M E4 920 to 960 MHz LTN/PTFC270051M E5 1930 to 1990 MHz LTN/PTFC270051M E6 1805 to 1880 MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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