PTFA211801EV5R250XTMA1

Infineon Technologies PTFA211801EV5R250XTMA1

Part Number:
PTFA211801EV5R250XTMA1
Manufacturer:
Infineon Technologies
Ventron No:
2477759-PTFA211801EV5R250XTMA1
Description:
FET RF 65V 2.14GHZ H36260-2
ECAD Model:
Datasheet:
PTFA211801EV5R250XTMA1

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Specifications
Infineon Technologies PTFA211801EV5R250XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PTFA211801EV5R250XTMA1.
  • Surface Mount
    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Pbfree Code
    icon-pbfree yes
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-CDFM-F2
  • Operating Temperature (Max)
    200°C
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    65V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Highest Frequency Band
    S B
  • RoHS Status
    RoHS Compliant
Description
PTFA211801EV5R250XTMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFA211801EV5R250XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFA211801EV5R250XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PTFA211801EV5R250XTMA1 More Descriptions
Trans RF MOSFET N-CH 65V 3-Pin Case 36260 T/R
LDMOS FET, High Power RF, 180W, 2.11-2.17GHz, H-36260-2 Pkg, T/R 250
RF POWER TRANSISTOR PTFA211801-TRANSISTO
High Power RF LDMOS FET, 180 W, 28 V, 2110 2170 MHz | Summary of Features: Broadband internal matching; Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion = 36 dBc - Adjacent channel power = 41 dBc; Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 180 W - Efficiency = 52%; Integrated ESD protection; Excellent thermal stability, low HCI drift; Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power; Pb-free and RoHS-compliant; Package: H-36260-2, bolt-down
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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