PTFA092201EV4R0XTMA1

Infineon Technologies PTFA092201EV4R0XTMA1

Part Number:
PTFA092201EV4R0XTMA1
Manufacturer:
Infineon Technologies
Ventron No:
2477737-PTFA092201EV4R0XTMA1
Description:
RF MOSFET LDMOS 30V H-36260-2
ECAD Model:
Datasheet:
PTFA092201EV4R0XTMA1

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Specifications
Infineon Technologies PTFA092201EV4R0XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PTFA092201EV4R0XTMA1.
  • Factory Lead Time
    12 Weeks
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Published
    2009
  • Part Status
    Active
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-CDFM-F2
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    65V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY B
  • RoHS Status
    RoHS Compliant
Description
PTFA092201EV4R0XTMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFA092201EV4R0XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFA092201EV4R0XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PTFA092201EV4R0XTMA1 More Descriptions
Trans RF MOSFET N-CH 65V 3-Pin Case 36260 T/R
LDMOS FET, High Power RF, 220W, 920-960MHz, H-36260-2 Pkg, T/R 50
High Power RF LDMOS FET, 220 W, 30 V, 920 960 MHz | Summary of Features: Broadband internal matching; Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion = 37 dBc - Adjacent channel power = 39 dBc; Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 250 W - Gain = 17.5 dB - Efficiency = 59%; Integrated ESD protection. Human Body Model, Class 2 (minimum); Excellent thermal stability, low HCI drift; Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power; Pb-free, RoHS-compliant; Package: H-36260-2, bolt-down
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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