Fairchild/ON Semiconductor PN4355
- Part Number:
- PN4355
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2846972-PN4355
- Description:
- TRANS PNP 60V 0.8A TO-92
- Datasheet:
- PN4355, MMBT4355
Fairchild/ON Semiconductor PN4355 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PN4355.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 10V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)800mA
- Turn Off Time-Max (toff)400ns
- Turn On Time-Max (ton)100ns
- RoHS StatusROHS3 Compliant
PN4355 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100mA, 1A.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
PN4355 Features
the DC current gain for this device is 100 @ 10mA 10V
the vce saturation(Max) is 1V @ 100mA, 1A
PN4355 Applications
There are a lot of Rochester Electronics, LLC
PN4355 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100mA, 1A.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
PN4355 Features
the DC current gain for this device is 100 @ 10mA 10V
the vce saturation(Max) is 1V @ 100mA, 1A
PN4355 Applications
There are a lot of Rochester Electronics, LLC
PN4355 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PN4355 More Descriptions
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
IC,PNP TRANSISTOR,GEN PURPSE, 60VOLT,SS,TO92,3 PIN
SAMTEC FTSH-103-01-L-D Board-To-Board Connector, FTSH Series, 6 Contacts, Header, 1.27 mm, Solder, 2 Rows
IC,PNP TRANSISTOR,GEN PURPSE, 60VOLT,SS,TO92,3 PIN
SAMTEC FTSH-103-01-L-D Board-To-Board Connector, FTSH Series, 6 Contacts, Header, 1.27 mm, Solder, 2 Rows
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