Fairchild/ON Semiconductor PN4275
- Part Number:
- PN4275
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2848126-PN4275
- Description:
- TRANS NPN 15V 0.2A TO-92
- ECAD Model:
-
- Datasheet:
- PN4275
Fairchild/ON Semiconductor PN4275 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PN4275.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published1997
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max350mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 10mA 1V
- Current - Collector Cutoff (Max)400nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)15V
- Current - Collector (Ic) (Max)200mA
PN4275 Overview
In this device, the DC current gain is 35 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 15V.
PN4275 Features
the DC current gain for this device is 35 @ 10mA 1V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the supplier device package of TO-92-3
PN4275 Applications
There are a lot of ON Semiconductor
PN4275 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 35 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 15V.
PN4275 Features
the DC current gain for this device is 35 @ 10mA 1V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the supplier device package of TO-92-3
PN4275 Applications
There are a lot of ON Semiconductor
PN4275 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PN4275 More Descriptions
Trans GP BJT NPN 15V 0.2A 3-Pin TO-92 Bulk
@IC,NPN TRANSISTOR,GEN PURPOSE SS,TO92,3 PIN (10)
NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics.
@IC,NPN TRANSISTOR,GEN PURPOSE SS,TO92,3 PIN (10)
NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics.
The three parts on the right have similar specifications to PN4275.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Base Part NumberView Compare
-
PN4275Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3-55°C~150°C TJBulk1997Obsolete1 (Unlimited)350mWNPN35 @ 10mA 1V400nA ICBO500mV @ 10mA, 100mA15V200mA-- -
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Box (TB)-Obsolete1 (Unlimited)625mWPNP250 @ 100μA 5V10nA ICBO250mV @ 500μA, 10mA40V500mAPN4250
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)350mWNPN35 @ 10mA 1V400nA ICBO500mV @ 10mA, 100mA15V200mA-
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)625mWPNP250 @ 100μA 5V10nA ICBO250mV @ 500μA, 10mA40V500mAPN4250
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