ON Semiconductor PN2907ARLRAG
- Part Number:
- PN2907ARLRAG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2468499-PN2907ARLRAG
- Description:
- TRANS PNP 60V 0.6A TO92
- Datasheet:
- PN2907A (Rev. Aug 2001)
ON Semiconductor PN2907ARLRAG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor PN2907ARLRAG.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating-600mA
- Frequency200MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPN2907A
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)1.6V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-1.6V
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)-60V
- Emitter Base Voltage (VEBO)5V
- hFE Min75
- Turn On Time-Max (ton)45ns
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
PN2907ARLRAG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.As it features a collector emitter saturation voltage of -1.6V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 600mA volts.
PN2907ARLRAG Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
PN2907ARLRAG Applications
There are a lot of ON Semiconductor
PN2907ARLRAG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.As it features a collector emitter saturation voltage of -1.6V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 600mA volts.
PN2907ARLRAG Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
PN2907ARLRAG Applications
There are a lot of ON Semiconductor
PN2907ARLRAG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PN2907ARLRAG More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
TRANS GP BJT PNP 60V 0.6A 3PIN TO-92
General Purpose Transistor PNP Silicon
Chip Resistor - Surface Mount 1kOhm 0201 (0603 Metric) ±1% ±250ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) RC RES SMD 1K OHM 1% 1/20W 0201
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, Vceo:60V; Collector Emitter Saturation Voltage, Vce(sat):100V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):300; Collector Current:0.6A RoHS Compliant: Yes
TRANS GP BJT PNP 60V 0.6A 3PIN TO-92
General Purpose Transistor PNP Silicon
Chip Resistor - Surface Mount 1kOhm 0201 (0603 Metric) ±1% ±250ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) RC RES SMD 1K OHM 1% 1/20W 0201
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, Vceo:60V; Collector Emitter Saturation Voltage, Vce(sat):100V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):300; Collector Current:0.6A RoHS Compliant: Yes
The three parts on the right have similar specifications to PN2907ARLRAG.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn On Time-Max (ton)RoHS StatusLead FreeFactory Lead TimeHTS CodeJESD-30 CodeOperating Temperature (Max)ConfigurationPower Dissipation-MaxTransistor ApplicationJEDEC-95 CodeFrequency - TransitionDC Current Gain-Min (hFE)Turn Off Time-Max (toff)Max Operating TemperatureMin Operating TemperaturePolarityContinuous Collector CurrentView Compare
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PN2907ARLRAGLAST SHIPMENTS (Last Updated: 4 days ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3SILICON-55°C~150°C TJTape & Reel (TR)2006e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors-60V625mWBOTTOM260-600mA200MHz40PN2907A3Not Qualified1Single625mW200MHzPNPPNP1.6V600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA60V200MHz-1.6V60V-60V5V7545nsRoHS CompliantLead Free----------------
-
-Through Hole-TO-226-3-SILICON--2017e0noActive-3EAR99Tin/Lead (Sn/Pb)Other Transistors--BOTTOMNOT SPECIFIED--NOT SPECIFIED-3Not Qualified1---PNP-1.6V600mA---60V200MHz-----45nsRoHS Compliant-8 Weeks8541.21.00.75O-PBCY-T3150°CSINGLE625mWSWITCHINGTO-92200MHz40100ns----
-
-Through Hole-TO-92---Bulk2000e0noActive-3EAR99Tin/Lead (Sn/Pb)Other Transistors--BOTTOMNOT SPECIFIED--NOT SPECIFIED-3Not Qualified1Single-200MHz--1.6V600mA---60V200MHz1.6V-60V5V7545nsRoHS Compliant-8 Weeks-O-PBCY-T3--625mWSWITCHING-200MHz100100ns150°C-65°CPNP450mA
-
OBSOLETE (Last Updated: 1 week ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3SILICON-55°C~150°C TJBulk2007e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors-60V625mWBOTTOM260-600mA200MHz40PN2907A3Not Qualified1Single625mW200MHzPNPPNP1.6V600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA60V200MHz-1.6V--60V5V7545nsRoHS CompliantLead Free---------------
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