Nexperia USA Inc. PMBS3906,215
- Part Number:
- PMBS3906,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3553811-PMBS3906,215
- Description:
- TRANS PNP 40V 0.1A SOT23
- Datasheet:
- PMBS3906,215
Nexperia USA Inc. PMBS3906,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMBS3906,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.75
- Terminal PositionDUAL
- Terminal FormGULL WING
- Base Part NumberPMBS3906
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation250mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency150MHz
- Frequency - Transition150MHz
- Turn Off Time-Max (toff)700ns
- Turn On Time-Max (ton)100ns
- RoHS StatusROHS3 Compliant
PMBS3906,215 Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.As a result, the part has a transition frequency of 150MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PMBS3906,215 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 150MHz
PMBS3906,215 Applications
There are a lot of Nexperia USA Inc.
PMBS3906,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.As a result, the part has a transition frequency of 150MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PMBS3906,215 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 150MHz
PMBS3906,215 Applications
There are a lot of Nexperia USA Inc.
PMBS3906,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PMBS3906,215 More Descriptions
40V 250mW 100mA PNP SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans GP BJT PNP 40V 0.1A 250mW Automotive 3-Pin SOT-23 T/R
PMBT3906 - 40 V, 100 mA PNP general-purpose transistor
TRANS PNP 40V 0.1A SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:-250mV; Current Ic Continuous a Max:-10mA; Gain Bandwidth ft Typ:150MHz; Hfe Min:100; Package / Case:SOT-23; Power Dissipation Pd:250mW; Termination Type:SMD; Transistor Type:General Purpose
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans GP BJT PNP 40V 0.1A 250mW Automotive 3-Pin SOT-23 T/R
PMBT3906 - 40 V, 100 mA PNP general-purpose transistor
TRANS PNP 40V 0.1A SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:-250mV; Current Ic Continuous a Max:-10mA; Gain Bandwidth ft Typ:150MHz; Hfe Min:100; Package / Case:SOT-23; Power Dissipation Pd:250mW; Termination Type:SMD; Transistor Type:General Purpose
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