Nexperia USA Inc. PEMH9,115
- Part Number:
- PEMH9,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2461893-PEMH9,115
- Description:
- TRANS 2NPN PREBIAS 0.3W SOT666
- ECAD Model:
-
- Datasheet:
- PEMH9,115
Nexperia USA Inc. PEMH9,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PEMH9,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 4.7
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberP*MH9
- Pin Count6
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Number of Elements2
- PolarityNPN
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic100mV @ 250μA, 5mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Resistor - Base (R1)10k Ω
- Resistor - Emitter Base (R2)47k Ω
- RoHS StatusROHS3 Compliant
PEMH9,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMH9,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMH9,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMH9,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMH9,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PEMH9,115 More Descriptions
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
Trans Digital BJT NPN 50V 100mA 300mW Automotive 6-Pin SOT-666 T/R
PEMH9 - NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
PEMH9 Series 50 V 100 mA Surface Mount NPN Resistor-Equipped Transistor -SOT-666
BRT TRANSISTOR, NPN, 50V, 100MA, 10KOHM / 47KOHM, 6-SOT-666
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1/R2:4.7 ;RoHS Compliant: Yes
TRANS NPN/NPN 50V 0.1A SOT666; Transistor Polarity:Dual NPN; Collector-to-Emitter Breakdown Voltage:50V; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-666; SVHC:No SVHC (18-Jun-2010); Case Style:SOT-666; Max Current Ic Continuous a:5mA; Max Voltage Vce Sat:100mV; Min Hfe:100; Power Dissipation:300mW; Termination Type:SMD; Transistor Type:General Purpose
Trans Digital BJT NPN 50V 100mA 300mW Automotive 6-Pin SOT-666 T/R
PEMH9 - NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
PEMH9 Series 50 V 100 mA Surface Mount NPN Resistor-Equipped Transistor -SOT-666
BRT TRANSISTOR, NPN, 50V, 100MA, 10KOHM / 47KOHM, 6-SOT-666
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1/R2:4.7 ;RoHS Compliant: Yes
TRANS NPN/NPN 50V 0.1A SOT666; Transistor Polarity:Dual NPN; Collector-to-Emitter Breakdown Voltage:50V; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-666; SVHC:No SVHC (18-Jun-2010); Case Style:SOT-666; Max Current Ic Continuous a:5mA; Max Voltage Vce Sat:100mV; Min Hfe:100; Power Dissipation:300mW; Termination Type:SMD; Transistor Type:General Purpose
The three parts on the right have similar specifications to PEMH9,115.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusOperating Temperature (Max)Number of ElementsPolarityConfigurationPower DissipationTransistor ApplicationTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Resistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusJESD-30 CodePower - MaxPolarity/Channel TypeMountMax Operating TemperatureMin Operating TemperatureMax Power DissipationElement ConfigurationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageRadiation HardeningLead FreeView Compare
-
PEMH9,1154 WeeksSurface MountSOT-563, SOT-666YES6SILICONTape & Reel (TR)2013e3Active1 (Unlimited)6EAR99Tin (Sn)BUILT-IN BIAS RESISTOR RATIO IS 4.7FLAT26030P*MH96Not Qualified150°C2NPNSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mWSWITCHING2 NPN - Pre-Biased (Dual)100 @ 5mA 5V1μA100mV @ 250μA, 5mA50V100mA10k Ω47k ΩROHS3 Compliant--------------- -
4 WeeksSurface MountSOT-563, SOT-666YES-SILICONTape & Reel (TR)2011e3Active1 (Unlimited)6EAR99Tin (Sn)BUILT IN BIAS RESISTOR RATIO 21.36FLATNOT SPECIFIEDNOT SPECIFIEDP*MH106Not Qualified150°C2-SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR-SWITCHING2 NPN - Pre-Biased (Dual)100 @ 100mA 5V1μA100mV @ 250μA, 5mA50V100mA2.2k Ω47k ΩROHS3 CompliantR-PDSO-F6300mWNPN-----------
-
4 WeeksSurface MountSOT-563, SOT-666-6-Tape & Reel (TR)2011e3Active1 (Unlimited)6EAR99Tin (Sn)BUILT IN BIAS RESISTOR RATIO 1FLAT---6--2NPN--SWITCHING2 NPN - Pre-Biased (Dual)30 @ 10mA 5V1μA150mV @ 500μA, 10mA--4.7k Ω4.7k ΩROHS3 Compliant---Surface Mount150°C-65°C300mWDual50V100mA50V50VNoLead Free
-
4 WeeksSurface MountSOT-563, SOT-666-6-Tape & Reel (TR)2009e3Active1 (Unlimited)6EAR99Tin (Sn)BUILT IN BIAS RESISTORFLAT---6--2NPN, PNP--SWITCHING2 NPN - Pre-Biased (Dual)100 @ 1mA 5V1μA150mV @ 500μA, 10mA--47k Ω-ROHS3 Compliant---Surface Mount150°C-65°C300mWDual50V100mA50V50VNo-
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
31 January 2024
ISO1050DUBR Characteristics, Application Fields, Layout Guidelines and More
Ⅰ. What is a CAN transceiver?Ⅱ. Overview of ISO1050DUBRⅢ. Technical parameters of ISO1050DUBRⅣ. Characteristics of ISO1050DUBRⅤ. ISO1050DUBR symbol, footprint and pin configurationⅥ. Application fields of ISO1050DUBRⅦ. Layout guidelines... -
31 January 2024
TXS0108EPWR Level Shifter Specifications, Architecture, Functions, Package and Applications
Ⅰ. What is TXS0108EPWR?Ⅱ. Specifications of TXS0108EPWRⅢ. Architecture of TXS0108EPWRⅣ. Functions of TXS0108EPWRⅤ. Package of TXS0108EPWRⅥ. What are the advantages and disadvantages of TXS0108EPWR?Ⅶ. Where is TXS0108EPWR used?The... -
01 February 2024
L7812CV Voltage Regulator: Internal Structure, Characteristics, Specifications and Other Details
Ⅰ. L7812CV descriptionⅡ. Internal structure and working principle of L7812CVⅢ. Pin configuration of L7812CVⅣ. What are the characteristics of L7812CV?Ⅴ. How to judge the quality of L7812CV?Ⅵ. Specifications... -
01 February 2024
REF3030AIDBZR Specifications, Symbol, Applications and REF3030AIDBZR vs REF3030AIDBZT
Ⅰ. Overview of REF3030AIDBZRⅡ. Specifications of REF3030AIDBZRⅢ. Symbol, footprint and pin configuration of REF3030AIDBZRⅣ. Features of REF3030AIDBZRⅤ. In which applications can we use REF3030AIDBZR?Ⅵ. What is the difference...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.