Nexperia USA Inc. PEMH1,115
- Part Number:
- PEMH1,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2844630-PEMH1,115
- Description:
- TRANS 2NPN PREBIAS 0.3W SOT666
- Datasheet:
- PEMH1,115
Nexperia USA Inc. PEMH1,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PEMH1,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- Weight4.535924g
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- Max Power Dissipation300mW
- Terminal FormFLAT
- Base Part NumberP*MH1
- Pin Count6
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency230MHz
- Collector Emitter Saturation Voltage150mV
- Emitter Base Voltage (VEBO)10V
- hFE Min60
- Resistor - Base (R1)22k Ω
- Resistor - Emitter Base (R2)22k Ω
- Height600μm
- Length1.7mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PEMH1,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMH1,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMH1,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMH1,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMH1,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PEMH1,115 More Descriptions
PEMH1 - NPN/NPN resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-666 T/R
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1/R2:1 ;RoHS Compliant: Yes
TRANS NPN/NPN 50V 0.1A SOT666; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:60; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:150mV; Current Ic Continuous a Max:10mA; Hfe Min:60; Package / Case:SOT-666; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:General Purpose
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-666 T/R
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1/R2:1 ;RoHS Compliant: Yes
TRANS NPN/NPN 50V 0.1A SOT666; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:60; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:150mV; Current Ic Continuous a Max:10mA; Hfe Min:60; Package / Case:SOT-666; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:General Purpose
The three parts on the right have similar specifications to PEMH1,115.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureMax Power DissipationTerminal FormBase Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Resistor - Emitter Base (R2)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Max Breakdown VoltageView Compare
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PEMH1,1154 WeeksSurface MountSurface MountSOT-563, SOT-66664.535924gTape & Reel (TR)2011e3Active1 (Unlimited)6SMD/SMTEAR99Tin (Sn)150°C-65°CBUILT-IN BIAS RESISTOR RATIO IS 1300mWFLATP*MH16100mA50V2NPNDual300mWSWITCHING2 NPN - Pre-Biased (Dual)50V100mA60 @ 5mA 5V1μA150mV @ 500μA, 10mA50V230MHz150mV10V6022k Ω22k Ω600μm1.7mm1.3mmNo SVHCNoROHS3 CompliantLead Free----
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4 WeeksSurface MountSurface MountSOT-563, SOT-6666-Tape & Reel (TR)2011e3Active1 (Unlimited)6-EAR99Tin (Sn)150°C-65°CBUILT IN BIAS RESISTOR RATIO 2.1300mWFLAT-6--2NPN, PNPDual-SWITCHING2 NPN - Pre-Biased (Dual)50V100mA50 @ 10mA 5V1μA100mV @ 500μA, 10mA50V----4.7k Ω10k Ω----NoROHS3 Compliant-26030-
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4 WeeksSurface MountSurface MountSOT-563, SOT-6666-Tape & Reel (TR)2011e3Active1 (Unlimited)6-EAR99Tin (Sn)150°C-65°CBUILT IN BIAS RESISTOR RATIO 1300mWFLAT-6--2NPNDual-SWITCHING2 NPN - Pre-Biased (Dual)50V100mA30 @ 10mA 5V1μA150mV @ 500μA, 10mA50V----4.7k Ω4.7k Ω----NoROHS3 CompliantLead Free--50V
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4 WeeksSurface MountSurface MountSOT-563, SOT-6666-Tape & Reel (TR)2013e3Active1 (Unlimited)6--Tin (Sn)150°C-65°CBUILT-IN BIAS RESISTOR RATIO IS 4.7300mWFLATP*MH96--2NPNDual-SWITCHING2 NPN - Pre-Biased (Dual)50V100mA100 @ 5mA 5V1μA100mV @ 250μA, 5mA50V----10k Ω47k Ω----NoROHS3 CompliantLead Free26030-
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