Nexperia USA Inc. PEMH9,315
- Part Number:
- PEMH9,315
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2844601-PEMH9,315
- Description:
- TRANS 2NPN PREBIAS 0.3W SOT666
- ECAD Model:
-
- Datasheet:
- PEMH9,315
Nexperia USA Inc. PEMH9,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PEMH9,315.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 4.7
- Max Power Dissipation300mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberP*MH9
- Pin Count6
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic100mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Resistor - Base (R1)10k Ω
- Resistor - Emitter Base (R2)47k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PEMH9,315 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMH9,315 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMH9,315. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMH9,315 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMH9,315. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PEMH9,315 More Descriptions
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-666 T/R
PEMH9 Series 50 V 100 mA SMT NPN Resistor-Equipped Transistor - SOT-666
PEMH9 - NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
PEMH9 Series 50 V 100 mA SMT NPN Resistor-Equipped Transistor - SOT-666
PEMH9 - NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
The three parts on the right have similar specifications to PEMH9,315.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageResistor - Base (R1)Resistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeECCN CodeSurface MountTransistor Element MaterialJESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max Breakdown VoltageView Compare
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PEMH9,3154 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2013e3Active1 (Unlimited)6Tin (Sn)150°C-65°CBUILT-IN BIAS RESISTOR RATIO IS 4.7300mWFLAT26030P*MH962NPNDualSWITCHING2 NPN - Pre-Biased (Dual)50V100mA100 @ 5mA 5V1μA100mV @ 250μA, 5mA50V10k Ω47k ΩNoROHS3 CompliantLead Free------------- -
4 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2009e3Active1 (Unlimited)6Tin (Sn)150°C-65°CBUILT IN BIAS RESISTANCE RATIO IS 0.47300mWFLAT---62NPNDualSWITCHING2 NPN - Pre-Biased (Dual)50V100mA60 @ 5mA 5V1μA150mV @ 500μA, 10mA50V47k Ω22k ΩNoROHS3 Compliant-EAR99-----------
-
4 Weeks-Surface MountSOT-563, SOT-666-Tape & Reel (TR)2011e3Active1 (Unlimited)6Tin (Sn)--BUILT IN BIAS RESISTOR RATIO 21.36-FLATNOT SPECIFIEDNOT SPECIFIEDP*MH1062--SWITCHING2 NPN - Pre-Biased (Dual)--100 @ 100mA 5V1μA100mV @ 250μA, 5mA-2.2k Ω47k Ω-ROHS3 Compliant-EAR99YESSILICONR-PDSO-F6Not Qualified150°CSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mWNPN50V100mA-
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4 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2011e3Active1 (Unlimited)6Tin (Sn)150°C-65°CBUILT IN BIAS RESISTOR RATIO 1300mWFLAT---62NPNDualSWITCHING2 NPN - Pre-Biased (Dual)50V100mA30 @ 10mA 5V1μA150mV @ 500μA, 10mA50V4.7k Ω4.7k ΩNoROHS3 CompliantLead FreeEAR99----------50V
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