Nexperia USA Inc. PEMD13,115
- Part Number:
- PEMD13,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2844578-PEMD13,115
- Description:
- TRANS PREBIAS NPN/PNP SOT666
- ECAD Model:
-
- Datasheet:
- PEMD13,115
Nexperia USA Inc. PEMD13,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PEMD13,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- Weight4.535924g
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 10
- Max Power Dissipation300mW
- Terminal FormFLAT
- Base Part NumberMD13
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Number of Channels2
- Element ConfigurationDual
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic100mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- hFE Min100
- Resistor - Base (R1)4.7k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47k Ω
- Height600μm
- Length1.7mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PEMD13,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMD13,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMD13,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMD13,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMD13,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PEMD13,115 More Descriptions
Transistor Digital BJT NPN/PNP 50V 100mA 6-Pin SS-Mini T/R
1 PCS NPN,1 PCS PNP - Pre-Biased(Dual) 300mW 100mA 50V SOT-666 Digital Transistors ROHS
PEMD13 - NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
PEMD13 Series 50 V 100 mA SMT NPN/PNP Resistor-Equipped Transistor - SOT-666
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1/R2:10 ;RoHS Compliant: Yes
TRANS NPN/PNP 50V 0.1A SOT666; Transistor Polarity:NPN / PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:100mV; Current Ic Continuous a Max:5mA; Hfe Min:100; Package / Case:SOT-666; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:General Purpose
1 PCS NPN,1 PCS PNP - Pre-Biased(Dual) 300mW 100mA 50V SOT-666 Digital Transistors ROHS
PEMD13 - NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
PEMD13 Series 50 V 100 mA SMT NPN/PNP Resistor-Equipped Transistor - SOT-666
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1/R2:10 ;RoHS Compliant: Yes
TRANS NPN/PNP 50V 0.1A SOT666; Transistor Polarity:NPN / PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:100mV; Current Ic Continuous a Max:5mA; Hfe Min:100; Package / Case:SOT-666; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:General Purpose
The three parts on the right have similar specifications to PEMD13,115.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureMax Power DissipationTerminal FormBase Part NumberPin CountNumber of ElementsPolarityNumber of ChannelsElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Peak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Transition FrequencyCollector Emitter Saturation VoltageEmitter Base Voltage (VEBO)View Compare
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PEMD13,1154 WeeksSurface MountSurface MountSOT-563, SOT-66664.535924gTape & Reel (TR)2011e3Active1 (Unlimited)6SMD/SMTEAR99Tin (Sn)150°C-65°CBUILT IN BIAS RESISTOR RATIO IS 10300mWFLATMD1362NPN, PNP2Dual300mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA100 @ 10mA 5V1μA100mV @ 250μA, 5mA50V50V1004.7k Ω100mA47k Ω600μm1.7mm1.3mmNo SVHCNoROHS3 CompliantLead Free---------- -
4 WeeksSurface MountSurface MountSOT-563, SOT-6666-Tape & Reel (TR)2011e3Active1 (Unlimited)6--Tin (Sn)150°C-65°CBUILT-IN BIAS RESISTOR RATIO IS 1300mWFLATMD1262NPN, PNP-Dual-SWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA80 @ 5mA 5V1μA150mV @ 500μA, 10mA50V--47k Ω-47k Ω----NoROHS3 CompliantLead Free---------
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4 WeeksSurface MountSurface MountSOT-563, SOT-6666-Tape & Reel (TR)2011-Active1 (Unlimited)----150°C-65°C-300mW----NPN, PNP-Dual--1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA30 @ 10mA 5V1μA150mV @ 500μA, 10mA50V--4.7kOhms-4.7kOhms----NoROHS3 CompliantLead FreeSOT-666300mW50V100mA-----
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4 WeeksSurface MountSurface MountSOT-563, SOT-66664.535924gTape & Reel (TR)2011e3Active1 (Unlimited)6SMD/SMTEAR99Tin (Sn)150°C-65°CBUILT IN BIAS RESISTANCE RATIO IS 1300mWFLATP*MD4862NPN, PNP-Dual300mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA80 @ 5mA 5V / 100 @ 10mA 5V1μA150mV @ 500μA, 10mA / 100mV @ 250μA, 5mA50V50V804.7k Ω, 22k Ω-47k Ω600μm1.7mm1.3mmNo SVHCNoROHS3 Compliant-----26030230MHz150mV10V
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