Nexperia USA Inc. PEMD30,315
- Part Number:
- PEMD30,315
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2844587-PEMD30,315
- Description:
- TRANS PREBIAS NPN/PNP SOT666
- Datasheet:
- PEMD30,315
Nexperia USA Inc. PEMD30,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PEMD30,315.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Max Power Dissipation300mW
- Terminal FormFLAT
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN AND PNP
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)150mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Resistor - Base (R1)2.2k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
PEMD30,315 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMD30,315 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMD30,315. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMD30,315 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMD30,315. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PEMD30,315 More Descriptions
PEMD30; PUMD30 - NPN/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
PEMD30 SERIES 50V 100MA 200MW STM NPN/PNP RESISTOR-EQUIPPED TRANSISTOR - SOT-666
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-666 T/R
PEMD30 SERIES 50V 100MA 200MW STM NPN/PNP RESISTOR-EQUIPPED TRANSISTOR - SOT-666
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-666 T/R
The three parts on the right have similar specifications to PEMD30,315.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Operating TemperatureMin Operating TemperatureMax Power DissipationTerminal FormPin CountNumber of ElementsElement ConfigurationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageResistor - Base (R1)Radiation HardeningRoHS StatusECCN CodeAdditional FeatureBase Part NumberPolarityResistor - Emitter Base (R2)Max Breakdown VoltageWeightTerminationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power DissipationTransition FrequencyCollector Emitter Saturation VoltageEmitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCView Compare
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PEMD30,3154 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2006e3Active1 (Unlimited)6Tin (Sn)150°C-65°C300mWFLAT62DualSWITCHINGNPN AND PNP1 NPN, 1 PNP - Pre-Biased (Dual)150mV100mA30 @ 20mA 5V1μA150mV @ 500μA, 10mA50V2.2k ΩNoROHS3 Compliant--------------------
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4 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2011e3Active1 (Unlimited)6Tin (Sn)150°C-65°C300mWGULL WING62DualSWITCHING-1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA80 @ 5mA 5V1μA150mV @ 500μA, 10mA50V22k ΩNoROHS3 CompliantEAR99BUILT-IN BIAS RESISTOR RATIO IS 2.1MD16NPN, PNP47k Ω--------------
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4 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2011e3Active1 (Unlimited)6Tin (Sn)150°C-65°C300mWFLAT62DualSWITCHING-1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA50 @ 10mA 5V1μA100mV @ 500μA, 10mA50V4.7k ΩNoROHS3 CompliantEAR99BUILT IN BIAS RESISTOR RATIO 2.1MD18NPN, PNP10k Ω50V-------------
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4 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2011e3Active1 (Unlimited)6Tin (Sn)150°C-65°C300mWFLAT62DualSWITCHING-1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA80 @ 5mA 5V / 100 @ 10mA 5V1μA150mV @ 500μA, 10mA / 100mV @ 250μA, 5mA50V4.7k Ω, 22k ΩNoROHS3 CompliantEAR99BUILT IN BIAS RESISTANCE RATIO IS 1P*MD48NPN, PNP47k Ω50V4.535924gSMD/SMT26030300mW230MHz150mV10V80600μm1.7mm1.3mmNo SVHC
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