Nexperia USA Inc. PEMD3,315
- Part Number:
- PEMD3,315
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3584871-PEMD3,315
- Description:
- TRANS PREBIAS NPN/PNP SOT666
- ECAD Model:
-
- Datasheet:
- PEMD3,315
Nexperia USA Inc. PEMD3,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PEMD3,315.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- Max Power Dissipation300mW
- Terminal FormFLAT
- Base Part NumberP*MD3
- Pin Count6
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements2
- PolarityNPN, PNP
- Number of Channels2
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)10V
- hFE Min30
- Resistor - Base (R1)10k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)10k Ω
- Height600μm
- Length1.7mm
- Width600μm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PEMD3,315 are a type of transistor array designed for use in a variety of applications. These transistors are pre-biased, meaning that they are already set up for use in a circuit, eliminating the need for additional components. The PEMD3,315 transistors are housed in a SOT666 package, which is a small outline package that is designed to save space and reduce the number of components needed in a circuit.
Features of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PEMD3,315 include:
• Pre-biased transistors, eliminating the need for additional components
• SOT666 package, designed to save space and reduce the number of components needed in a circuit
• NPN/PNP transistors, allowing for a wide range of applications
• Low power consumption
• High switching speed
Applications of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PEMD3,315 include:
• Automotive electronics
• Industrial control systems
• Power management systems
• Telecommunications systems
• Consumer electronics
• Medical devices
Features of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PEMD3,315 include:
• Pre-biased transistors, eliminating the need for additional components
• SOT666 package, designed to save space and reduce the number of components needed in a circuit
• NPN/PNP transistors, allowing for a wide range of applications
• Low power consumption
• High switching speed
Applications of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PEMD3,315 include:
• Automotive electronics
• Industrial control systems
• Power management systems
• Telecommunications systems
• Consumer electronics
• Medical devices
PEMD3,315 More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-666 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon
PEMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon
PEMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
The three parts on the right have similar specifications to PEMD3,315.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureMax Power DissipationTerminal FormBase Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityNumber of ChannelsElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeECCN CodeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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PEMD3,3154 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2013e3Active1 (Unlimited)6Tin (Sn)150°C-65°CBUILT-IN BIAS RESISTOR RATIO IS 1300mWFLATP*MD36100mA50V2NPN, PNP2DualSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA30 @ 5mA 5V1μA150mV @ 500μA, 10mA50V50V10V3010k Ω100mA10k Ω600μm1.7mm600μmNoROHS3 CompliantLead Free------ -
4 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2011e3Active1 (Unlimited)6Tin (Sn)150°C-65°CBUILT-IN BIAS RESISTOR RATIO IS 1300mWFLATMD126--2NPN, PNP-DualSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA80 @ 5mA 5V1μA150mV @ 500μA, 10mA50V---47k Ω-47k Ω---NoROHS3 CompliantLead Free-----
-
4 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2011e3Active1 (Unlimited)6Tin (Sn)150°C-65°CBUILT-IN BIAS RESISTOR RATIO IS 2.1300mWGULL WINGMD166--2NPN, PNP-DualSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA80 @ 5mA 5V1μA150mV @ 500μA, 10mA50V---22k Ω-47k Ω---NoROHS3 Compliant-EAR99----
-
4 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2011-Active1 (Unlimited)--150°C-65°C-300mW------NPN, PNP-Dual-1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA30 @ 10mA 5V1μA150mV @ 500μA, 10mA50V---4.7kOhms-4.7kOhms---NoROHS3 CompliantLead Free-SOT-666300mW50V100mA
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