PD84010TR-E

STMicroelectronics PD84010TR-E

Part Number:
PD84010TR-E
Manufacturer:
STMicroelectronics
Ventron No:
2848136-PD84010TR-E
Description:
FET RF 40V 870MHZ 10PWRSOIC
ECAD Model:
Datasheet:
PD84010TR-E

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Specifications
STMicroelectronics PD84010TR-E technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics PD84010TR-E.
  • Package / Case
    PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Voltage - Rated
    40V
  • Subcategory
    FET General Purpose Power
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Current Rating
    8A
  • Frequency
    870MHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    PD84010
  • Pin Count
    10
  • JESD-30 Code
    R-PDSO-G2
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    165°C
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Current - Test
    300mA
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS
  • Gain
    16.3dB
  • Drain Current-Max (Abs) (ID)
    8A
  • DS Breakdown Voltage-Min
    40V
  • Power - Output
    2W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    95W
  • Voltage - Test
    7.5V
  • RoHS Status
    ROHS3 Compliant
Description
PD84010TR-E Overview
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PD84010TR-E or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PD84010TR-E. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PD84010TR-E More Descriptions
Trans MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Formed lead) T/R
RF MOSFET Transistors RF PWR LDMOS Trans 10W 14.3 dB 870MHz
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to PD84010TR-E.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Voltage - Rated
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Current - Test
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Gain
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Power - Output
    FET Technology
    Power Dissipation-Max (Abs)
    Voltage - Test
    RoHS Status
    Lifecycle Status
    Mount
    Number of Pins
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Element Configuration
    Power Dissipation
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Output Power
    Drain to Source Breakdown Voltage
    Radiation Hardening
    Factory Lead Time
    Weight
    REACH SVHC
    Lead Free
    View Compare
  • PD84010TR-E
    PD84010TR-E
    PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
    YES
    SILICON
    Tape & Reel (TR)
    e3
    Obsolete
    3 (168 Hours)
    2
    EAR99
    Matte Tin (Sn)
    40V
    FET General Purpose Power
    DUAL
    GULL WING
    NOT SPECIFIED
    not_compliant
    8A
    870MHz
    NOT SPECIFIED
    PD84010
    10
    R-PDSO-G2
    Not Qualified
    165°C
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    300mA
    AMPLIFIER
    N-CHANNEL
    LDMOS
    16.3dB
    8A
    40V
    2W
    METAL-OXIDE SEMICONDUCTOR
    95W
    7.5V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PD84010-E
    PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
    -
    -
    Tube
    e3
    Obsolete
    3 (168 Hours)
    2
    EAR99
    Matte Tin (Sn)
    -
    FET General Purpose Power
    DUAL
    GULL WING
    250
    -
    8A
    870MHz
    30
    PD84010
    10
    R-PDSO-G2
    -
    -
    1
    -
    ENHANCEMENT MODE
    SOURCE
    300mA
    AMPLIFIER
    N-CHANNEL
    LDMOS
    16.3dB
    8A
    -
    2W
    METAL-OXIDE SEMICONDUCTOR
    -
    7.5V
    ROHS3 Compliant
    OBSOLETE (Last Updated: 8 months ago)
    Surface Mount
    3
    165°C
    -65°C
    95W
    Single
    95W
    40V
    8A
    15V
    10W
    40V
    No
    -
    -
    -
    -
  • PD84008L-E
    8-PowerVDFN
    -
    -
    Cut Tape (CT)
    e3
    Active
    3 (168 Hours)
    5
    EAR99
    MATTE TIN
    -
    FET General Purpose Power
    QUAD
    -
    225
    -
    7A
    870MHz
    -
    PD84008
    14
    S-PQCC-N5
    -
    -
    1
    -
    ENHANCEMENT MODE
    SOURCE
    250mA
    AMPLIFIER
    N-CHANNEL
    LDMOS
    15.5dB
    7A
    -
    2W
    METAL-OXIDE SEMICONDUCTOR
    -
    7.5V
    ROHS3 Compliant
    ACTIVE (Last Updated: 8 months ago)
    Surface Mount
    8
    150°C
    -65°C
    26.7W
    Single
    26.7W
    25V
    7A
    15V
    -
    25V
    No
    11 Weeks
    -
    -
    -
  • PD84002
    TO-243AA
    -
    -
    Cut Tape (CT)
    e3
    Active
    3 (168 Hours)
    3
    EAR99
    Matte Tin (Sn)
    -
    FET General Purpose Power
    -
    FLAT
    260
    not_compliant
    2A
    870MHz
    30
    PD84002
    3
    -
    Not Qualified
    -
    1
    -
    ENHANCEMENT MODE
    SOURCE
    100mA
    AMPLIFIER
    N-CHANNEL
    LDMOS
    15dB
    2A
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    -
    7.5V
    ROHS3 Compliant
    ACTIVE (Last Updated: 7 months ago)
    Surface Mount
    3
    150°C
    -65°C
    6W
    Single
    -
    25V
    2A
    15V
    2W
    -
    -
    11 Weeks
    130.492855mg
    No SVHC
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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