PD54008L-E

STMicroelectronics PD54008L-E

Part Number:
PD54008L-E
Manufacturer:
STMicroelectronics
Ventron No:
2475040-PD54008L-E
Description:
TRANSISTOR RF 5X5 POWERFLAT
ECAD Model:
Datasheet:
PD54008L-E

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Part Pictures
  • PD54008L-E Detail Images
  • PD54008L-E Detail Images
  • PD54008L-E Detail Images
Specifications
STMicroelectronics PD54008L-E technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics PD54008L-E.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Number of Pins
    8
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    3.1V
  • Max Power Dissipation
    26.7W
  • Terminal Position
    QUAD
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    5A
  • Frequency
    500MHz
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    PD54008
  • Pin Count
    14
  • JESD-30 Code
    S-PQCC-N5
  • Number of Elements
    1
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    26.7W
  • Case Connection
    SOURCE
  • Current - Test
    200mA
  • Transistor Application
    AMPLIFIER
  • Drain to Source Voltage (Vdss)
    25V
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS
  • Continuous Drain Current (ID)
    5A
  • Gate to Source Voltage (Vgs)
    15V
  • Max Output Power
    8W
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain to Source Breakdown Voltage
    25V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    7.5V
  • Power Gain
    15dB
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PD54008L-E Overview
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PD54008L-E or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PD54008L-E. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PD54008L-E More Descriptions
N-Channel 8 W 7 V Surface Mount RF Power Transistor - PowerFLAT 5x5
Transistor RF FET N-CH 25V 5A 500MHz 8-Pin PowerFLAT T/R
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF power transistors, the LdmoST plastic familySTMicroelectronics SCT
RF MOSFET LDMOS 7.5V POWERFLAT
Rf Power |Stmicroelectronics PD54008L-E
Product Comparison
The three parts on the right have similar specifications to PD54008L-E.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Package / Case
    Number of Pins
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Current - Test
    Transistor Application
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Transistor Type
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Output Power
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    FET Technology
    Voltage - Test
    Power Gain
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Form
    Gain
    Input Capacitance
    Height
    Length
    Width
    Qualification Status
    View Compare
  • PD54008L-E
    PD54008L-E
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Surface Mount
    8-PowerVDFN
    8
    Tape & Reel (TR)
    e3
    Active
    3 (168 Hours)
    5
    EAR99
    MATTE TIN
    150°C
    -65°C
    HIGH RELIABILITY
    FET General Purpose Power
    3.1V
    26.7W
    QUAD
    260
    5A
    500MHz
    30
    PD54008
    14
    S-PQCC-N5
    1
    Single
    ENHANCEMENT MODE
    26.7W
    SOURCE
    200mA
    AMPLIFIER
    25V
    N-CHANNEL
    LDMOS
    5A
    15V
    8W
    5A
    25V
    METAL-OXIDE SEMICONDUCTOR
    7.5V
    15dB
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • PD54008-E
    ACTIVE (Last Updated: 8 months ago)
    25 Weeks
    Surface Mount
    PowerSO-10 Exposed Bottom Pad
    4
    Tube
    e3
    Active
    3 (168 Hours)
    2
    EAR99
    Matte Tin (Sn) - annealed
    165°C
    -65°C
    HIGH RELIABILITY
    FET General Purpose Power
    25V
    73W
    DUAL
    -
    5A
    500MHz
    -
    PD54008
    10
    R-PDSO-G2
    1
    Single
    ENHANCEMENT MODE
    73W
    SOURCE
    150mA
    AMPLIFIER
    25V
    N-CHANNEL
    LDMOS
    5A
    20V
    8W
    5A
    25V
    METAL-OXIDE SEMICONDUCTOR
    7.5V
    -
    No
    ROHS3 Compliant
    Lead Free
    GULL WING
    11.5dB
    91pF
    3.5mm
    7.5mm
    9.4mm
    -
  • PD54008S-E
    -
    -
    Surface Mount
    PowerSO-10 Exposed Bottom Pad
    3
    Tube
    -
    Obsolete
    3 (168 Hours)
    2
    EAR99
    -
    165°C
    -65°C
    HIGH RELIABILITY
    FET General Purpose Power
    -
    73W
    DUAL
    NOT SPECIFIED
    5A
    500MHz
    NOT SPECIFIED
    PD54008
    10
    R-PDSO-F2
    1
    Single
    ENHANCEMENT MODE
    73W
    SOURCE
    150mA
    AMPLIFIER
    25V
    N-CHANNEL
    LDMOS
    5A
    20V
    8W
    5A
    25V
    METAL-OXIDE SEMICONDUCTOR
    7.5V
    -
    -
    ROHS3 Compliant
    -
    FLAT
    11.5dB
    -
    -
    -
    -
    Not Qualified
  • PD54003L-E
    -
    -
    Surface Mount
    8-PowerVDFN
    14
    Tape & Reel (TR)
    e3
    Obsolete
    3 (168 Hours)
    5
    EAR99
    MATTE TIN
    150°C
    -65°C
    HIGH RELIABILITY
    FET General Purpose Power
    7V
    19.5W
    QUAD
    260
    4A
    500MHz
    30
    PD54003
    5
    S-PQCC-N5
    1
    Single
    ENHANCEMENT MODE
    -
    SOURCE
    50mA
    AMPLIFIER
    25V
    N-CHANNEL
    LDMOS
    4A
    15V
    3W
    4A
    -
    METAL-OXIDE SEMICONDUCTOR
    7.5V
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    20dB
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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