Nexperia USA Inc. PBHV8115Z,115
- Part Number:
- PBHV8115Z,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3068782-PBHV8115Z,115
- Description:
- TRANS NPN 150V 1A SOT223
- ECAD Model:
-
- Datasheet:
- PBHV8115Z,115
Nexperia USA Inc. PBHV8115Z,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBHV8115Z,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation1.4W
- Terminal FormGULL WING
- Frequency30MHz
- Base Part NumberPBHV8115
- Pin Count4
- Number of Elements1
- Element ConfigurationDual
- Power Dissipation1.4W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product30MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)150V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic350mV @ 200mA, 1A
- Collector Emitter Breakdown Voltage150V
- Transition Frequency30MHz
- Max Breakdown Voltage150V
- Collector Base Voltage (VCBO)400V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBHV8115Z,115 Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 200mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.30MHz is present in the transition frequency.An input voltage of 150V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
PBHV8115Z,115 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 350mV @ 200mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 30MHz
PBHV8115Z,115 Applications
There are a lot of Nexperia USA Inc.
PBHV8115Z,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 50 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 200mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.30MHz is present in the transition frequency.An input voltage of 150V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
PBHV8115Z,115 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 350mV @ 200mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 30MHz
PBHV8115Z,115 Applications
There are a lot of Nexperia USA Inc.
PBHV8115Z,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBHV8115Z,115 More Descriptions
PBHV8115Z Series 150 V 1 A NPN High Voltage Low VCEsat (BISS) Transistor - SC-73
Trans GP BJT NPN 150V 1A 1400mW Automotive 4-Pin(3 Tab) SC-73 T/R
TRANSISTOR,NPN,1A,150V,SOT223, REEL
150V 700mW 1A 50@500mA10V 30MHz 400mV@100mA10mA NPN 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
NEXPERIA - PBHV8115Z,115 - Bipolarer Einzeltransistor (BJT), NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
TRANSISTOR,NPN,1A,150V,SOT223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 700mW; DC Collector Current: 1A; DC Current Gain hFE: 250hFE; Transistor
Trans GP BJT NPN 150V 1A 1400mW Automotive 4-Pin(3 Tab) SC-73 T/R
TRANSISTOR,NPN,1A,150V,SOT223, REEL
150V 700mW 1A 50@500mA10V 30MHz 400mV@100mA10mA NPN 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
NEXPERIA - PBHV8115Z,115 - Bipolarer Einzeltransistor (BJT), NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
TRANSISTOR,NPN,1A,150V,SOT223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 700mW; DC Collector Current: 1A; DC Current Gain hFE: 250hFE; Transistor
The three parts on the right have similar specifications to PBHV8115Z,115.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal FormFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRadiation HardeningRoHS StatusLead FreeWeightTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)HeightLengthWidthJESD-30 CodeConfigurationPower - MaxFrequency - TransitionView Compare
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PBHV8115Z,1154 WeeksSurface MountSurface MountTO-261-4, TO-261AA4SILICON150°C TJTape & Reel (TR)2008e3Active1 (Unlimited)4EAR99Tin (Sn)1.4WGULL WING30MHzPBHV811541Dual1.4WCOLLECTORSWITCHING30MHzNPNNPN150V1A50 @ 500mA 10V100nA350mV @ 200mA, 1A150V30MHz150V400V6V100No SVHCNoROHS3 CompliantLead Free------------ -
4 WeeksSurface MountSurface MountTO-261-4, TO-261AA4SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)4-Tin (Sn)1.45WGULL WING35MHzPBHV921541Single1.45WCOLLECTORSWITCHING35MHzPNPPNP150V2A80 @ 1A 10V100nA350mV @ 400mA, 2A150V35MHz150V200V-6V60-NoROHS3 CompliantLead Free4.535924gDUAL260306.35mm12.7mm6.35mm----
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4 WeeksSurface MountSurface MountTO-261-4, TO-261AA73SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)4EAR99Tin (Sn)1.4WGULL WING115MHzPBHV911541Single1.4WCOLLECTORSWITCHING115MHzPNPPNP150V1A100 @ 100mA 10V100nA300mV @ 100mA, 500mA150V115MHz150V200V-6V100-NoROHS3 CompliantLead Free-DUAL26030---R-PDSO-G4---
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4 WeeksSurface MountSurface MountTO-261-4, TO-261AA4SILICON150°C TJCut Tape (CT)2014-Active1 (Unlimited)4--650mWGULL WING--41--COLLECTORSWITCHING-PNPPNP250mV100mA70 @ 10mA 10V100nA250mV @ 6mA, 30mA600V38MHz600V-----ROHS3 Compliant--DUALNOT SPECIFIEDNOT SPECIFIED----SINGLE650mW38MHz
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