ON Semiconductor P2N2222A
- Part Number:
- P2N2222A
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465887-P2N2222A
- Description:
- TRANS NPN 40V 0.6A TO92
- ECAD Model:
-
- Datasheet:
- P2N2222A
ON Semiconductor P2N2222A technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor P2N2222A.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2006
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- HTS Code8541.21.00.75
- Voltage - Rated DC40V
- Max Power Dissipation625mW
- Reach Compliance Codenot_compliant
- Current Rating600mA
- Base Part NumberP2N2222
- Pin Count3
- Element ConfigurationSingle
- Power Dissipation625mW
- Gain Bandwidth Product300MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)1V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min35
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
P2N2222A Description
P2N2222A is an NPN silicon amplifier transistor.
P2N2222A Features
Pb?Free Packages are Available*
P2N2222A Applications
Switching applications.
P2N2222A is an NPN silicon amplifier transistor.
P2N2222A Features
Pb?Free Packages are Available*
P2N2222A Applications
Switching applications.
P2N2222A More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 Bulk
Bipolar Transistor; Transistor Polarity:N Channel; Collector Emitter Saturation Voltage, Vce(sat):1V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):35; C-E Breakdown Voltage:40V; Collector Current:0.6A RoHS Compliant: No
Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 Bulk
Bipolar Transistor; Transistor Polarity:N Channel; Collector Emitter Saturation Voltage, Vce(sat):1V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):35; C-E Breakdown Voltage:40V; Collector Current:0.6A RoHS Compliant: No
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