Fairchild/ON Semiconductor NZT560A
- Part Number:
- NZT560A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585271-NZT560A
- Description:
- TRANS NPN 60V 3A SOT-223
- ECAD Model:
-
- Datasheet:
- NZT560A
Fairchild/ON Semiconductor NZT560A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NZT560A.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight188mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2017
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation1W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating3A
- Frequency75MHz
- Base Part NumberNZT560
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Gain Bandwidth Product75MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency75MHz
- Collector Emitter Saturation Voltage400mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min250
- Height1.6mm
- Length6.5mm
- Width3.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NZT560A Overview
DC current gain in this device equals 250 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 300mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.As a result, the part has a transition frequency of 75MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 3A volts.
NZT560A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 75MHz
NZT560A Applications
There are a lot of ON Semiconductor
NZT560A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 250 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 300mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.As a result, the part has a transition frequency of 75MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 3A volts.
NZT560A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 75MHz
NZT560A Applications
There are a lot of ON Semiconductor
NZT560A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NZT560A More Descriptions
Bipolar (BJT) Single Transistor, NPN, 60 V, 75 MHz, 1 W, 3 A, 25
NZT560A Series 60 V CE Breakdown 3 A NPN General Purpose Amplifier - SOT-223
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 60V 3A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
60V 1W 3A 250@500mA2V 75MHz NPN 400mV@3A300mA -55¡Í~ 150¡Í@(Tj) SOT-223-4L Bipolar Transistors - BJT ROHS
Transistor, BIPOL, NPN, 60V, SOT-223-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:75MHz; Power
These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.
NZT560A Series 60 V CE Breakdown 3 A NPN General Purpose Amplifier - SOT-223
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 60V 3A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
60V 1W 3A 250@500mA2V 75MHz NPN 400mV@3A300mA -55¡Í~ 150¡Í@(Tj) SOT-223-4L Bipolar Transistors - BJT ROHS
Transistor, BIPOL, NPN, 60V, SOT-223-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:75MHz; Power
These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.
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