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NX3020NAKS,115

Nexperia USA Inc. NX3020NAKS,115

Part Number:
NX3020NAKS,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2473447-NX3020NAKS,115
Description:
MOSFET 2N-CH 30V 0.18A 6TSSOP
ECAD Model:
Datasheet:
NX3020NAKS,115

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Specifications
Nexperia USA Inc. NX3020NAKS,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. NX3020NAKS,115.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Terminal Finish
    Tin (Sn)
  • Max Power Dissipation
    375mW
  • Terminal Form
    GULL WING
  • Pin Count
    6
  • Number of Elements
    2
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    375mW
  • Turn On Delay Time
    5 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.5 Ω @ 100mA, 10V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    13pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    0.44nC @ 4.5V
  • Rise Time
    5ns
  • Fall Time (Typ)
    17 ns
  • Turn-Off Delay Time
    34 ns
  • Continuous Drain Current (ID)
    180mA
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    30V
  • Drain Current-Max (Abs) (ID)
    0.18A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Nexperia Transistors - FETs, MOSFETs - Arrays NX3020NAKS,115 is a MOSFET array designed for use in a variety of applications. It is a 2N-channel device with a maximum voltage rating of 30V and a maximum current rating of 0.18A. It is packaged in a 6TSSOP package, which is a small surface-mount package that is suitable for use in high-density applications.

The NX3020NAKS,115 is designed to provide high performance and reliability in a wide range of applications. It is suitable for use in power management, motor control, and other applications that require high-speed switching. It is also suitable for use in automotive, industrial, and consumer applications.

The NX3020NAKS,115 features low on-resistance, low gate charge, and low input capacitance. It also features a low threshold voltage and a low gate-source voltage. This makes it suitable for use in high-speed switching applications. Additionally, it has a high-temperature operating range and is RoHS compliant.

The NX3020NAKS,115 is a versatile device that can be used in a variety of applications. It is suitable for use in power management, motor control, and other applications that require high-speed switching. It is also suitable for use in automotive, industrial, and consumer applications.
NX3020NAKS,115 More Descriptions
Transistor MOSFET Array Dual N-CH 30V 180mA 6-Pin TSSOP T/RAvnet Japan
NX3020NAKS - 30 V, 180 mA dual N-channel Trench MOSFET
Power Field-Effect Transistor, 0.18A I(D), N-Channel, Metal-oxide Semiconductor FET
NX3020NAKS Series 30 V 375 mW 0.44 nC Dual N-Channel SMT TrenchMOS FET - SOT-363
MOSFET, N-CH, 30V, 0.18A, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 180mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 2.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2
NX3020NAKS,115 Detail Images
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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