Nexperia USA Inc. NX3008PBKS,115
- Part Number:
- NX3008PBKS,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3069717-NX3008PBKS,115
- Description:
- MOSFET 2P-CH 30V 0.2A 6TSSOP
- Datasheet:
- NX3008PBKS,115
Nexperia USA Inc. NX3008PBKS,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. NX3008PBKS,115.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchMOS™
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation445mW
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Power Dissipation445mW
- Turn On Delay Time19 ns
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs4.1 Ω @ 200mA, 4.5V
- Vgs(th) (Max) @ Id1.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds46pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
- Rise Time30ns
- Drain to Source Voltage (Vdss)30V
- Fall Time (Typ)38 ns
- Turn-Off Delay Time65 ns
- Continuous Drain Current (ID)200mA
- Gate to Source Voltage (Vgs)8V
- Max Dual Supply Voltage-30V
- Drain to Source Breakdown Voltage-30V
- FET FeatureLogic Level Gate
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The Nexperia NX3008PBKS, 115 is a dual P-Channel MOSFET array in a pack of 75. This product is designed for use in a variety of applications, including power management, motor control, and signal switching. It features a maximum current rating of 200 mA and a maximum voltage rating of 30 V. The device is housed in a 6-pin SOT-363 package, making it ideal for space-constrained applications. This product is designed to provide reliable performance and long-term reliability. It is also RoHS compliant, making it an environmentally friendly choice. The Nexperia NX3008PBKS, 115 is an ideal choice for a variety of applications requiring a reliable, high-performance MOSFET array.
NX3008PBKS,115 More Descriptions
Transistor MOSFET Array Dual P-CH 30V 200mA 6-Pin TSSOP T/RAvnet Japan
NX3008PBKS - 30 V, 200 mA dual P-channel Trench MOSFET
NX3008PBKS Series 30 V 4.1 Ohm 445 mW Dual P-Channel SMT TrenchMOS FET - SOT-363
Channel Type:P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:200mA; Drain Source On State Resistance N Channel:- RoHS Compliant: Yes
NX3008PBKS - 30 V, 200 mA dual P-channel Trench MOSFET
NX3008PBKS Series 30 V 4.1 Ohm 445 mW Dual P-Channel SMT TrenchMOS FET - SOT-363
Channel Type:P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:200mA; Drain Source On State Resistance N Channel:- RoHS Compliant: Yes
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