Nexperia USA Inc. NX3008NBKS,115
- Part Number:
- NX3008NBKS,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2473455-NX3008NBKS,115
- Description:
- MOSFET 2N-CH 30V 0.35A 6TSSOP
- ECAD Model:
-
- Datasheet:
- NX3008NBKS,115
Nexperia USA Inc. NX3008NBKS,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. NX3008NBKS,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchMOS™
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Terminal FormGULL WING
- Pin Count6
- Reference StandardAEC-Q101; IEC-60134
- JESD-30 CodeR-PDSO-G6
- Number of Elements2
- Number of Channels2
- Operating ModeENHANCEMENT MODE
- Power Dissipation445mW
- Turn On Delay Time15 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.4 Ω @ 350mA, 4.5V
- Vgs(th) (Max) @ Id1.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs0.68nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Turn-Off Delay Time69 ns
- Continuous Drain Current (ID)350mA
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)0.35A
- Drain to Source Breakdown Voltage30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- FET FeatureLogic Level Gate
- Ambient Temperature Range High150°C
- Height1.1mm
- RoHS StatusROHS3 Compliant
Description:
The Nexperia NX3008NBKS,115 is a MOSFET 2N-CH 30V 0.35A 6TSSOP array. It is a high-performance, low-power, low-voltage, low-on-resistance, and low-gate-charge device. It is designed for use in a wide range of applications, including power management, motor control, and switching applications.
Features:
• Low-on-resistance: 0.35A
• Low-gate-charge: 6TSSOP
• High-performance: 30V
• Low-power: 0.35A
• Low-voltage: 6TSSOP
• High-speed switching: 30V
• Low-noise operation: 0.35A
Applications:
The Nexperia NX3008NBKS,115 is suitable for use in a wide range of applications, including power management, motor control, and switching applications. It is also suitable for use in automotive, industrial, and consumer electronics applications. It can be used in applications such as DC-DC converters, motor control, and power management.
The Nexperia NX3008NBKS,115 is a MOSFET 2N-CH 30V 0.35A 6TSSOP array. It is a high-performance, low-power, low-voltage, low-on-resistance, and low-gate-charge device. It is designed for use in a wide range of applications, including power management, motor control, and switching applications.
Features:
• Low-on-resistance: 0.35A
• Low-gate-charge: 6TSSOP
• High-performance: 30V
• Low-power: 0.35A
• Low-voltage: 6TSSOP
• High-speed switching: 30V
• Low-noise operation: 0.35A
Applications:
The Nexperia NX3008NBKS,115 is suitable for use in a wide range of applications, including power management, motor control, and switching applications. It is also suitable for use in automotive, industrial, and consumer electronics applications. It can be used in applications such as DC-DC converters, motor control, and power management.
NX3008NBKS,115 More Descriptions
Transistor MOSFET Array Dual N-CH 30V 350mA 6-Pin TSSOP T/RAvnet Japan
vp_NX3008NBKS - 30 V, 350 mA dual N-channel Trench MOSFET
NX3008NBKS Series 30 V 1.4 Ohm 445 mW Dual N-Channel TrenchMOS FET - SOT-363
MOSFET,NN CH, 30V, 350MA, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 350mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900m
vp_NX3008NBKS - 30 V, 350 mA dual N-channel Trench MOSFET
NX3008NBKS Series 30 V 1.4 Ohm 445 mW Dual N-Channel TrenchMOS FET - SOT-363
MOSFET,NN CH, 30V, 350MA, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 350mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900m
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