ON Semiconductor NTZD5110NT1G
- Part Number:
- NTZD5110NT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069712-NTZD5110NT1G
- Description:
- MOSFET 2N-CH 60V 0.294A SOT563
- ECAD Model:
-
- Datasheet:
- NTZD5110NT1G
ON Semiconductor NTZD5110NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTZD5110NT1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance1.6Ohm
- SubcategoryFET General Purpose Power
- Max Power Dissipation900mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNTZD5110N
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation250mW
- Turn On Delay Time12 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.6 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds24.5pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
- Rise Time7.3ns
- Drain to Source Voltage (Vdss)60V
- Fall Time (Typ)7.3 ns
- Turn-Off Delay Time63.7 ns
- Continuous Drain Current (ID)294mA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height600μm
- Length1.7mm
- Width1.3mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The ON Semiconductor NTZD5110NT1G is a MOSFET array that is designed for use in a variety of applications. This device features two N-channel MOSFETs in a single package, with a maximum voltage rating of 60V and a maximum current rating of 0.294A. The package is a SOT563, which is a small, surface-mount package that is ideal for space-constrained applications. This device is designed to provide high performance and reliability, making it an ideal choice for a variety of applications. It is also RoHS compliant, making it an environmentally friendly choice. The ON Semiconductor NTZD5110NT1G is an excellent choice for applications that require a reliable, high-performance MOSFET array.
NTZD5110NT1G More Descriptions
NTZD5110N: Small Signal MOSFET 60V 310mA 1.6 Ohm Dual N-Channel SOT-563 with ESD Protection
Transistor MOSFET Array Dual N-CH 60V 294mA 6-Pin SOT-563 T/R - Tape and Reel
Dual N-Channel 60 V 1.6 Ohm 250 mW Small Signal MOSFET - SOT-563
NTZD5110NT1G Dual N-channel MOSFET Transistor, 0.31 A, 60 V, 6-Pin SOT-563 | ON Semiconductor NTZD5110NT1G
Dual N Channel Mosfet, 60V, Sot-563, Full Reel; Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:294Ma; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi NTZD5110NT1G.
MOSFET, DUAL NCH, 60V, 310MA, SOT-563; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 294mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.19ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 250mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor MOSFET Array Dual N-CH 60V 294mA 6-Pin SOT-563 T/R - Tape and Reel
Dual N-Channel 60 V 1.6 Ohm 250 mW Small Signal MOSFET - SOT-563
NTZD5110NT1G Dual N-channel MOSFET Transistor, 0.31 A, 60 V, 6-Pin SOT-563 | ON Semiconductor NTZD5110NT1G
Dual N Channel Mosfet, 60V, Sot-563, Full Reel; Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:294Ma; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi NTZD5110NT1G.
MOSFET, DUAL NCH, 60V, 310MA, SOT-563; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 294mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.19ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 250mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to NTZD5110NT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyFET FeatureHeightLengthWidthRadiation HardeningRoHS StatusLead FreeMountTerminal FinishQualification StatusCurrent - Continuous Drain (Id) @ 25°CPolarity/Channel TypeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxVoltage - Rated DCCurrent RatingView Compare
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NTZD5110NT1GACTIVE (Last Updated: 4 days ago)4 WeeksTinSurface MountSOT-563, SOT-666YES6SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)6EAR991.6OhmFET General Purpose Power900mWFLAT26040NTZD5110N62DualENHANCEMENT MODE250mW12 ns2 N-Channel (Dual)SWITCHING1.6 Ω @ 500mA, 10V2.5V @ 250μA24.5pF @ 20V0.7nC @ 4.5V7.3ns60V7.3 ns63.7 ns294mA20V60VMETAL-OXIDE SEMICONDUCTORLogic Level Gate600μm1.7mm1.3mmNoROHS3 CompliantLead Free---------- -
LAST SHIPMENTS (Last Updated: 5 days ago)--Surface MountSOT-563, SOT-666-6SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesObsolete1 (Unlimited)6--Other Transistors250mWFLATNOT SPECIFIEDNOT SPECIFIED-62DualENHANCEMENT MODE280mW-N and P-ChannelSWITCHING550m Ω @ 540mA, 4.5V1V @ 250μA72pF @ 16V2.5nC @ 4.5V6.5ns-6.5 ns29 ns540mA6V20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate----RoHS CompliantLead FreeSurface MountTin (Sn)Not Qualified540mA 430mAN-CHANNEL AND P-CHANNEL0.54A0.55Ohm--
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LAST SHIPMENTS (Last Updated: 1 day ago)--Surface MountSOT-563, SOT-666YES6SILICON-55°C~150°C TJTape & Reel (TR)2012e3yesObsolete1 (Unlimited)6EAR99550MOhmOther Transistors250mWFLAT26040NTZD3155C62DualENHANCEMENT MODE250mW-N and P-ChannelSWITCHING550m Ω @ 540mA, 4.5V1V @ 250μA150pF @ 16V2.5nC @ 4.5V12ns-12 ns35 ns540mA6V-20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate----RoHS CompliantLead Free-Tin (Sn)Not Qualified540mA 430mAN-CHANNEL AND P-CHANNEL0.54A-20V540mA
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----SC75-6----Tape & Reel (TR)---------------------------------------RoHS Compliant----------
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