ON Semiconductor NTUD3170NZT5G
- Part Number:
- NTUD3170NZT5G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069643-NTUD3170NZT5G
- Description:
- MOSFET 2N-CH 20V 0.22A SOT-963
- Datasheet:
- NTUD3170NZT5G
ON Semiconductor NTUD3170NZT5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTUD3170NZT5G.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSOT-963
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance1.5Ohm
- SubcategoryFET General Purpose Power
- Max Power Dissipation125mW
- Terminal FormFLAT
- Base Part NumberNTUD3170NZ
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation200mW
- Turn On Delay Time16.5 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.5 Ω @ 100mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds12.5pF @ 15V
- Current - Continuous Drain (Id) @ 25°C220mA
- Rise Time25.5ns
- Fall Time (Typ)80 ns
- Turn-Off Delay Time142 ns
- Continuous Drain Current (ID)280mA
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height400μm
- Length1.05mm
- Width850μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTUD3170NZT5G Description
The half-dual N-channel power MOSFET is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.
NTUD3170NZT5G Features ? Dual N?Channel MOSFET ? Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mm Package ? 1.5 V Gate Voltage Rating ? Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics ? This is a Pb?Free Device
NTUD3170NZT5G Applications ? General Purpose Interfacing Switch ? Optimized for Power Management in Ultra Portable Equipment ? Analog Switch
The half-dual N-channel power MOSFET is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.
NTUD3170NZT5G Features ? Dual N?Channel MOSFET ? Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mm Package ? 1.5 V Gate Voltage Rating ? Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics ? This is a Pb?Free Device
NTUD3170NZT5G Applications ? General Purpose Interfacing Switch ? Optimized for Power Management in Ultra Portable Equipment ? Analog Switch
NTUD3170NZT5G More Descriptions
Small Signal MOSFET 20V 280mA 1.5 Ohm Dual N-Channel SOT-963 with ESD Protection
Transistor MOSFET Array Dual N-CH 20V 220mA 6-Pin SOT-963 T/R - Tape and Reel
MOSFET 2N-CH 20V 0.22A SOT-963 / Trans MOSFET N-CH 20V 0.22A 6-Pin SOT-963 T/R
MOSFET, DUAL N-CH, 20V, 0.22A, SOT-963; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.75ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 125mW; Transistor Case Style: SOT-963; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor MOSFET Array Dual N-CH 20V 220mA 6-Pin SOT-963 T/R - Tape and Reel
MOSFET 2N-CH 20V 0.22A SOT-963 / Trans MOSFET N-CH 20V 0.22A 6-Pin SOT-963 T/R
MOSFET, DUAL N-CH, 20V, 0.22A, SOT-963; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.75ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 125mW; Transistor Case Style: SOT-963; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to NTUD3170NZT5G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryMax Power DissipationTerminal FormBase Part NumberPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyFET FeatureHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePower - MaxDrain to Source Voltage (Vdss)MountTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPolarity/Channel TypeFeedback Cap-Max (Crss)View Compare
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NTUD3170NZT5GACTIVE (Last Updated: 5 days ago)8 WeeksTinSurface MountSOT-963YES6SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)6EAR991.5OhmFET General Purpose Power125mWFLATNTUD3170NZ62DualENHANCEMENT MODE200mW16.5 ns2 N-Channel (Dual)SWITCHING1.5 Ω @ 100mA, 4.5V1V @ 250μA12.5pF @ 15V220mA25.5ns80 ns142 ns280mA1V8V20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate400μm1.05mm850μmNo SVHCNoROHS3 CompliantLead Free------------
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-8 Weeks-Surface MountSOT-963----55°C~150°C TJTape & Reel (TR)2011--Active1 (Unlimited)-------------2 N-Channel (Dual)-1.5 Ω @ 100mA, 4.5V1V @ 100μA12.5pF @ 15V220mA Ta--------Standard-----ROHS3 Compliant-125mW Ta20V---------
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LAST SHIPMENTS (Last Updated: 4 days ago)--Surface MountSOT-963-6SILICON-55°C~150°C TJTape & Reel (TR)2007-yesObsolete1 (Unlimited)6EAR99--125mWFLAT-62DualENHANCEMENT MODE125mW-2 P-Channel (Dual)SWITCHING5 Ω @ 100mA, 4.5V1V @ 250μA12pF @ 15V-37ns37 ns112 ns140mA-8V20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-----RoHS CompliantLead Free-20VSurface MountNickel/Gold/Palladium (Ni/Au/Pd)26040Not Qualified0.14A5Ohm--
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LAST SHIPMENTS (Last Updated: 1 week ago)--Surface MountSOT-963-6SILICON-55°C~150°C TJTape & Reel (TR)2008-yesObsolete1 (Unlimited)6EAR99--125mWFLAT-62DualENHANCEMENT MODE125mW-N and P-ChannelSWITCHING3 Ω @ 100mA, 4.5V1V @ 250μA9pF @ 15V160mA 140mA37ns97 ns112 ns140mA-8V20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-----RoHS CompliantLead Free--Surface MountNickel/Gold/Palladium (Ni/Au/Pd)26040Not Qualified-3OhmN-CHANNEL AND P-CHANNEL2.2 pF
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