NSV1C201MZ4T1G

ON Semiconductor NSV1C201MZ4T1G

Part Number:
NSV1C201MZ4T1G
Manufacturer:
ON Semiconductor
Ventron No:
2845144-NSV1C201MZ4T1G
Description:
TRANS NPN 100V 2A SOT223-4
ECAD Model:
Datasheet:
NSV1C201MZ4T1G

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Specifications
ON Semiconductor NSV1C201MZ4T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSV1C201MZ4T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    7 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Surface Mount
    YES
  • Number of Pins
    4
  • Weight
    250.212891mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Power Dissipation
    800mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Frequency
    100MHz
  • Pin Count
    4
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    2W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    180mV @ 200mA, 2A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    180mV
  • Max Breakdown Voltage
    100V
  • Collector Base Voltage (VCBO)
    140V
  • Emitter Base Voltage (VEBO)
    7V
  • Continuous Collector Current
    2A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSV1C201MZ4T1G Overview
This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 180mV.A VCE saturation (Max) of 180mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.

NSV1C201MZ4T1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz


NSV1C201MZ4T1G Applications
There are a lot of ON Semiconductor
NSV1C201MZ4T1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
NSV1C201MZ4T1G More Descriptions
Trans GP BJT NPN 100V 2A 2000mW Automotive 4-Pin(3 Tab) SOT-223 T/R
Trans GP BJT NPN 100V 2A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled
2.0 A, 100 V Low VCE(sat) NPN Bipolar Transistor
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
100V 800mW 120@500mA,2V 2A NPN SOT-223 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR, NPN, 100V, SOT-223-4
100V Npn Low Vce(Sat) Tra/Reel Rohs Compliant: Yes |Onsemi NSV1C201MZ4T1G
Product Comparison
The three parts on the right have similar specifications to NSV1C201MZ4T1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Frequency
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Halogen Free
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Continuous Collector Current
    Radiation Hardening
    RoHS Status
    Lead Free
    Subcategory
    Reference Standard
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Series
    View Compare
  • NSV1C201MZ4T1G
    NSV1C201MZ4T1G
    ACTIVE (Last Updated: 6 days ago)
    7 Weeks
    Surface Mount
    TO-261-4, TO-261AA
    YES
    4
    250.212891mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    Tin (Sn)
    800mW
    DUAL
    GULL WING
    100MHz
    4
    1
    Single
    2W
    COLLECTOR
    SWITCHING
    Halogen Free
    100MHz
    NPN
    NPN
    100V
    2A
    120 @ 500mA 2V
    100nA ICBO
    180mV @ 200mA, 2A
    100V
    100MHz
    180mV
    100V
    140V
    7V
    2A
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NSV1C201LT1G
    ACTIVE (Last Updated: 6 days ago)
    8 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2001
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    490mW
    DUAL
    GULL WING
    -
    3
    1
    Single
    -
    -
    SWITCHING
    Halogen Free
    110MHz
    NPN
    NPN
    150mV
    3A
    120 @ 500mA 2V
    100nA ICBO
    150mV @ 200mA, 2A
    100V
    110MHz
    30mV
    100V
    140V
    -
    2A
    No
    ROHS3 Compliant
    Lead Free
    Other Transistors
    AEC-Q101
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NSV1C301ET4G-VF01
    -
    8 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    -
    -
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    1997
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    Tin (Sn)
    -
    SINGLE
    GULL WING
    -
    -
    1
    -
    -
    COLLECTOR
    SWITCHING
    -
    -
    NPN
    NPN
    -
    -
    120 @ 1A 2V
    100nA ICBO
    250mV @ 300mA, 3A
    -
    120MHz
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    AEC-Q101
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    SINGLE
    2.1W
    100V
    3A
    120MHz
    -
  • NSV1C300ET4G-VF01
    -
    8 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    -
    -
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    Tin (Sn)
    -
    SINGLE
    GULL WING
    -
    -
    1
    -
    -
    COLLECTOR
    SWITCHING
    -
    -
    PNP
    PNP
    -
    -
    180 @ 500mA 2V
    100nA ICBO
    400mV @ 300mA, 3A
    -
    100MHz
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    SINGLE
    2.1W
    100V
    3A
    100MHz
    Automotive, AEC-Q101
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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