ON Semiconductor NSV1C201MZ4T1G
- Part Number:
- NSV1C201MZ4T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845144-NSV1C201MZ4T1G
- Description:
- TRANS NPN 100V 2A SOT223-4
- Datasheet:
- NSV1C201MZ4T1G
ON Semiconductor NSV1C201MZ4T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSV1C201MZ4T1G.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time7 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Number of Pins4
- Weight250.212891mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation800mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Frequency100MHz
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic180mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage180mV
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)7V
- Continuous Collector Current2A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSV1C201MZ4T1G Overview
This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 180mV.A VCE saturation (Max) of 180mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
NSV1C201MZ4T1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSV1C201MZ4T1G Applications
There are a lot of ON Semiconductor
NSV1C201MZ4T1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 180mV.A VCE saturation (Max) of 180mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
NSV1C201MZ4T1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSV1C201MZ4T1G Applications
There are a lot of ON Semiconductor
NSV1C201MZ4T1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NSV1C201MZ4T1G More Descriptions
Trans GP BJT NPN 100V 2A 2000mW Automotive 4-Pin(3 Tab) SOT-223 T/R
Trans GP BJT NPN 100V 2A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled
2.0 A, 100 V Low VCE(sat) NPN Bipolar Transistor
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
100V 800mW 120@500mA,2V 2A NPN SOT-223 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR, NPN, 100V, SOT-223-4
100V Npn Low Vce(Sat) Tra/Reel Rohs Compliant: Yes |Onsemi NSV1C201MZ4T1G
Trans GP BJT NPN 100V 2A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled
2.0 A, 100 V Low VCE(sat) NPN Bipolar Transistor
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
100V 800mW 120@500mA,2V 2A NPN SOT-223 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR, NPN, 100V, SOT-223-4
100V Npn Low Vce(Sat) Tra/Reel Rohs Compliant: Yes |Onsemi NSV1C201MZ4T1G
The three parts on the right have similar specifications to NSV1C201MZ4T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormFrequencyPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationHalogen FreeGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentRadiation HardeningRoHS StatusLead FreeSubcategoryReference StandardPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSeriesView Compare
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NSV1C201MZ4T1GACTIVE (Last Updated: 6 days ago)7 WeeksSurface MountTO-261-4, TO-261AAYES4250.212891mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)4EAR99Tin (Sn)800mWDUALGULL WING100MHz41Single2WCOLLECTORSWITCHINGHalogen Free100MHzNPNNPN100V2A120 @ 500mA 2V100nA ICBO180mV @ 200mA, 2A100V100MHz180mV100V140V7V2ANoROHS3 CompliantLead Free-------------
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ACTIVE (Last Updated: 6 days ago)8 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3-SILICON-55°C~150°C TJTape & Reel (TR)2001e3yesActive1 (Unlimited)3EAR99Tin (Sn)490mWDUALGULL WING-31Single--SWITCHINGHalogen Free110MHzNPNNPN150mV3A120 @ 500mA 2V100nA ICBO150mV @ 200mA, 2A100V110MHz30mV100V140V-2ANoROHS3 CompliantLead FreeOther TransistorsAEC-Q101----------
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-8 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES--SILICON-65°C~150°C TJTape & Reel (TR)1997e3yesActive1 (Unlimited)2-Tin (Sn)-SINGLEGULL WING--1--COLLECTORSWITCHING--NPNNPN--120 @ 1A 2V100nA ICBO250mV @ 300mA, 3A-120MHz------ROHS3 Compliant--AEC-Q101NOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G2SINGLE2.1W100V3A120MHz-
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-8 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES--SILICON-65°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)2-Tin (Sn)-SINGLEGULL WING--1--COLLECTORSWITCHING--PNPPNP--180 @ 500mA 2V100nA ICBO400mV @ 300mA, 3A-100MHz------ROHS3 Compliant---NOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G2SINGLE2.1W100V3A100MHzAutomotive, AEC-Q101
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