ON Semiconductor NST489AMT1G

NST489AMT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 500mA 5V.The collector emitter saturation voltage is 100mV, which allows for maximum design flexibility.When VCE saturation is 200mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.In the part, the transition frequency is 300MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 2A volts can be achieved.

NST489AMT1G Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 300MHz


NST489AMT1G Applications
There are a lot of ON Semiconductor
NST489AMT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting