ON Semiconductor NSS40300MZ4T1G

Name: NSS40300MZ4T1G
Brand: ON Semiconductor
SKU: 2465285-NSS40300MZ4T1G
Availability: InStock
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Part Number:: NSS40300MZ4T1G

Manufacturer:: ON Semiconductor

Ventron No:: 2465285-NSS40300MZ4T1G

Description:: TRANS PNP 40V 3A SOT-223

ECAD Model:

Datasheet:: NSS40300MZ4T1G

Specifications

ON Semiconductor NSS40300MZ4T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS40300MZ4T1G.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
5 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
160MHz
Base Part Number
NSS40300
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
160MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
175 @ 1A 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
160MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NSS40300MZ4T1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 175 @ 1A 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 160MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 3A volts.

NSS40300MZ4T1G Features
the DC current gain for this device is 175 @ 1A 1V
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz

NSS40300MZ4T1G Applications
There are a lot of ON Semiconductor
NSS40300MZ4T1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

NSS40300MZ4T1G More Descriptions

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Transistor, PNP, -40V, -3A, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:160MHz; Power
The combination of low saturation voltage and high gain makes this an ideal device for high speed switching applications where power savings is a concern.
Bipolar Transistor, Pnp, -40V, Sot-223, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins Rohs Compliant: Yes |Onsemi NSS40300MZ4T1G.
TRANSISTOR, PNP, -40V, -3A, SOT-223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 160MHz; Power Dissipation Pd: 2W; DC Collector Current: -3A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Certification