ON Semiconductor NSS40501UW3T2G
- Part Number:
- NSS40501UW3T2G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466542-NSS40501UW3T2G
- Description:
- TRANS NPN 40V 5A 3-WDFN
- ECAD Model:
-
- Datasheet:
- NSS40501UW3T2G
ON Semiconductor NSS40501UW3T2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS40501UW3T2G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / Case3-WDFN Exposed Pad
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation1.5W
- Terminal PositionDUAL
- Frequency150MHz
- Base Part NumberNSS40501
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.5W
- Case ConnectionCOLLECTOR
- Power - Max875mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Gain Bandwidth Product150MHz
- Polarity/Channel TypePNP
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic150mV @ 400mA, 4A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage150mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)6V
- hFE Min200
- Height750μm
- Length2mm
- Width2mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSS40501UW3T2G Overview
DC current gain in this device equals 200 @ 2A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 150mV @ 400mA, 4A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 5A volts.
NSS40501UW3T2G Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
NSS40501UW3T2G Applications
There are a lot of ON Semiconductor
NSS40501UW3T2G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 200 @ 2A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 150mV @ 400mA, 4A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 5A volts.
NSS40501UW3T2G Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
NSS40501UW3T2G Applications
There are a lot of ON Semiconductor
NSS40501UW3T2G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NSS40501UW3T2G More Descriptions
Small Signal Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
NSS Series 40 V 5 A Surface Mount Low Vce NPN Transistor - DFN-3W
ON Semi NSS40501UW3T2G NPN Bipolar Transistor, 5 A, 40 V, 3-Pin WDFN | ON Semiconductor NSS40501UW3T2G
Low VCE(sat) Transistor, NPN, 40 V, 5.0 A
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor, Npn, 40V, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:7A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi NSS40501UW3T2G
NSS Series 40 V 5 A Surface Mount Low Vce NPN Transistor - DFN-3W
ON Semi NSS40501UW3T2G NPN Bipolar Transistor, 5 A, 40 V, 3-Pin WDFN | ON Semiconductor NSS40501UW3T2G
Low VCE(sat) Transistor, NPN, 40 V, 5.0 A
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor, Npn, 40V, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:7A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi NSS40501UW3T2G
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