ON Semiconductor NSS35200MR6T1G
- Part Number:
- NSS35200MR6T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845734-NSS35200MR6T1G
- Description:
- TRANS PNP 35V 2A TSOP-6
- ECAD Model:
-
- Datasheet:
- NSS35200MR6T1G
ON Semiconductor NSS35200MR6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS35200MR6T1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-35V
- Max Power Dissipation625mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-2A
- Frequency100MHz
- Base Part NumberNSS35200
- Pin Count6
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Power - Max625mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)35V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1.5A 1.5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic310mV @ 20mA, 2A
- Collector Emitter Breakdown Voltage35V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-260mV
- Max Breakdown Voltage35V
- Collector Base Voltage (VCBO)55V
- Emitter Base Voltage (VEBO)5V
- hFE Min100
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSS35200MR6T1G Overview
This device has a DC current gain of 100 @ 1.5A 1.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -260mV.A VCE saturation (Max) of 310mV @ 20mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 35V volts can be used.A maximum collector current of 2A volts is possible.
NSS35200MR6T1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
NSS35200MR6T1G Applications
There are a lot of ON Semiconductor
NSS35200MR6T1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 1.5A 1.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -260mV.A VCE saturation (Max) of 310mV @ 20mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 35V volts can be used.A maximum collector current of 2A volts is possible.
NSS35200MR6T1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
NSS35200MR6T1G Applications
There are a lot of ON Semiconductor
NSS35200MR6T1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NSS35200MR6T1G More Descriptions
Trans GP BJT PNP 35V 2A 1000mW Automotive 6-Pin TSOP T/R
NSS Series 20 V 2 A Surface Mount Low Vce PNP Transistor - TSOP-6
Small Signal Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon
Low VCE(sat) Transistor, PNP, 35 V, 2.0 A
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
30nA 35V 1W 2A 200@1.5A1.5V 100MHz 260mV@2A20mA PNP -55¡Í~ 150¡Í@(Tj) TSOP-6 Bipolar Transistors - BJT ROHS
NSS Series 20 V 2 A Surface Mount Low Vce PNP Transistor - TSOP-6
Small Signal Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon
Low VCE(sat) Transistor, PNP, 35 V, 2.0 A
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
30nA 35V 1W 2A 200@1.5A1.5V 100MHz 260mV@2A20mA PNP -55¡Í~ 150¡Í@(Tj) TSOP-6 Bipolar Transistors - BJT ROHS
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