ON Semiconductor NJW0302G
- Part Number:
- NJW0302G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465542-NJW0302G
- Description:
- TRANS PNP 250V 15A TO-3P
- ECAD Model:
-
- Datasheet:
- NJW0302G
ON Semiconductor NJW0302G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NJW0302G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time26 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation150W
- Frequency30MHz
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150W
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product30MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)250V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 3A 5V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 500mA, 5A
- Collector Emitter Breakdown Voltage250V
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)250V
- Emitter Base Voltage (VEBO)5V
- hFE Min75
- Height20.1mm
- Length15.8mm
- Width5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NJW0302G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 3A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 500mA, 5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 30MHz is present in the part.Collector current can be as low as 15A volts at its maximum.
NJW0302G Features
the DC current gain for this device is 75 @ 3A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
NJW0302G Applications
There are a lot of ON Semiconductor
NJW0302G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 3A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 500mA, 5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 30MHz is present in the part.Collector current can be as low as 15A volts at its maximum.
NJW0302G Features
the DC current gain for this device is 75 @ 3A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
NJW0302G Applications
There are a lot of ON Semiconductor
NJW0302G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NJW0302G More Descriptions
ON Semi NJW0302G PNP Bipolar Transistor; 15 A; 250 V; 3-Pin TO-3P
Bipolar Power Transistors, Complementary, 15 A, 250 V PNP
250V 150W 75@3A,5V 15A PNP TO-3PN Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 250V 15A 3-Pin(3 Tab) TO-3P Rail - Rail/Tube
Power Bipolar Transistor, 15A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ON SEMICONDUCTOR - NJW0302G - TRANSISTOR, PNP, 250V, 15A, TO3P
TRANSISTOR, PNP, 250V, 15A, TO3P; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 150W; DC Collector Current: -15A; DC Current Gain hFE: 75hFE; Transist
Bipolar Transistor, Pnp, -250V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:250V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:30Mhz Rohs Compliant: Yes |Onsemi NJW0302G
Bipolar Power Transistors, Complementary, 15 A, 250 V PNP
250V 150W 75@3A,5V 15A PNP TO-3PN Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 250V 15A 3-Pin(3 Tab) TO-3P Rail - Rail/Tube
Power Bipolar Transistor, 15A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ON SEMICONDUCTOR - NJW0302G - TRANSISTOR, PNP, 250V, 15A, TO3P
TRANSISTOR, PNP, 250V, 15A, TO3P; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 150W; DC Collector Current: -15A; DC Current Gain hFE: 75hFE; Transist
Bipolar Transistor, Pnp, -250V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:250V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:30Mhz Rohs Compliant: Yes |Onsemi NJW0302G
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