ON Semiconductor NJVNJD35N04T4G
- Part Number:
- NJVNJD35N04T4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069160-NJVNJD35N04T4G
- Description:
- TRANS NPN DARL 350V 4A DPAK-4
- ECAD Model:
-
- Datasheet:
- NJVNJD35N04T4G
ON Semiconductor NJVNJD35N04T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NJVNJD35N04T4G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time22 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation45W
- Base Part NumberNJD35N04
- Pin Count3
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation45W
- Halogen FreeHalogen Free
- Gain Bandwidth Product90MHz
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)350V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 2A 2V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.5V @ 20mA, 2A
- Collector Emitter Breakdown Voltage350V
- Transition Frequency90MHz
- Collector Base Voltage (VCBO)700V
- Emitter Base Voltage (VEBO)5V
- hFE Min2000
- Continuous Collector Current4A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NJVNJD35N04T4G Overview
In this device, the DC current gain is 2000 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 20mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 90MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
NJVNJD35N04T4G Features
the DC current gain for this device is 2000 @ 2A 2V
the vce saturation(Max) is 1.5V @ 20mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 90MHz
NJVNJD35N04T4G Applications
There are a lot of ON Semiconductor
NJVNJD35N04T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 2000 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 20mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 90MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
NJVNJD35N04T4G Features
the DC current gain for this device is 2000 @ 2A 2V
the vce saturation(Max) is 1.5V @ 20mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 90MHz
NJVNJD35N04T4G Applications
There are a lot of ON Semiconductor
NJVNJD35N04T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NJVNJD35N04T4G More Descriptions
Power Bipolar Transistor, 4A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
4.0 A, 350 V NPN Darlington Bipolar Power Transistor
Trans Darlington NPN 350V 4A 45000mW Automotive 3-Pin(2 Tab) DPAK T/R
Npn Darlington Power Tran/Reel Rohs Compliant: Yes |Onsemi NJVNJD35N04T4G
4.0 A, 350 V NPN Darlington Bipolar Power Transistor
Trans Darlington NPN 350V 4A 45000mW Automotive 3-Pin(2 Tab) DPAK T/R
Npn Darlington Power Tran/Reel Rohs Compliant: Yes |Onsemi NJVNJD35N04T4G
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