ON Semiconductor NJD2873T4G

NJD2873T4G Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 50mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).65MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.

NJD2873T4G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 65MHz


NJD2873T4G Applications
There are a lot of ON Semiconductor
NJD2873T4G applications of single BJT transistors.


Inverter
Interface
Driver
Muting