Fairchild/ON Semiconductor NDS8858H

Name: NDS8858H
Brand: Fairchild/ON Semiconductor
SKU: 3069978-NDS8858H
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NDS8858H

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3069978-NDS8858H

Description:: MOSFET N/P-CH 30V 8SOIC

ECAD Model:

Datasheet:: NDS8858H

Specifications

Fairchild/ON Semiconductor NDS8858H technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS8858H.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
230.4mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1W
Current Rating
4.8A
Number of Elements
2
Power Dissipation
2.5W
FET Type
N and P-Channel
Rds On (Max) @ Id, Vgs
35m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
720pF @ 15V
Current - Continuous Drain (Id) @ 25°C
6.3A 4.8A
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Rise Time
20ns
Fall Time (Typ)
19 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
4.8A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
FET Feature
Logic Level Gate
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

NDS8858H Description These complementary MOSFET half-bridge devices are produced using Xiantong's proprietary high cell density. DMOS technology. This high-density process is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. When two gates are connected together, these devices are particularly suitable for low-voltage half-bridge applications or CMOS applications. NDS8858H Features
N-Channel 6.3A30VR=0.035@V=10V P-Channel-4.8A，-30V，R=0.065@Vs=-10V High density cell design or extremely low Rpsion High power and current handling capability in a widely used surtace mount package. Matched pair for equal input capacitance and power capability NDS8858H Applications
low-voltage half-bridge applications CMOS applications

NDS8858H More Descriptions

Tape & Reel (TR) Surface Mount N and P-Channel 2 Mosfet Array 6.3A 4.8A 4.8A 1W 19ns
Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC N T/R
Dual N/p Channel Mosfet, 30V, Soic, Full Reel; Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.035Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.

Certification