Micron Technology Inc. NAND512W3A2DZA6E

Name: NAND512W3A2DZA6E
Brand: Micron Technology Inc.
SKU: 3243655-NAND512W3A2DZA6E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NAND512W3A2DZA6E

Manufacturer:: Micron Technology Inc.

Ventron No:: 3243655-NAND512W3A2DZA6E

Description:: IC FLASH 512MBIT 63VFBGA

ECAD Model:

Datasheet:: NAND512W3A2DZA6E

Specifications

Micron Technology Inc. NAND512W3A2DZA6E technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. NAND512W3A2DZA6E.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
63-TFBGA
Number of Pins
63
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
63
Technology
FLASH - NAND
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Terminal Pitch
0.8mm
Base Part Number
NAND512-A
Power Supplies
3/3.3V
Memory Size
512Mb 64M x 8
Nominal Supply Current
30mA
Memory Type
Non-Volatile
Memory Format
FLASH
Memory Interface
Parallel
Organization
64MX8
Memory Width
8
Write Cycle Time - Word, Page
50ns
Address Bus Width
26b
Density
512 Mb
Standby Current-Max
0.00005A
Access Time (Max)
35 ns
Sync/Async
Asynchronous
Word Size
8b
Data Polling
NO
Toggle Bit
NO
Command User Interface
YES
Number of Sectors/Size
4K
Sector Size
16K
Page Size
512B
Ready/Busy
YES
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

NAND512W3A2DZA6E Overview
The product being offered has a Moisture Sensitivity Level (MSL) of 3, with a maximum exposure time of 168 hours. The Terminal Position is located at the bottom of the product. The Power Supplies are set at 3/3.3V, providing efficient and stable power to the device. The Memory Format is FLASH, allowing for quick and reliable data storage. The Organization is 64MX8, providing a high capacity for data storage. The Address Bus Width is 26b, allowing for efficient and fast data transfer. The Access Time (Max) is 35 ns, ensuring speedy data retrieval. The Toggle Bit is set to NO, providing a stable and reliable output. The Command User Interface is set to YES, allowing for easy and user-friendly operation. This product does not have Radiation Hardening capabilities.

NAND512W3A2DZA6E Features
Package / Case: 63-TFBGA
63 Pins

NAND512W3A2DZA6E Applications
There are a lot of Micron Technology Inc.
NAND512W3A2DZA6E Memory applications.

networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders

NAND512W3A2DZA6E More Descriptions

NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray
Asynchronous Obsolete BOTTOM Non-Volatile ic memory -40C~85C TA 3/3.3V 512Mb 30mA
IC FLSH 512MBIT PARALLEL 63VFBGA

Product Comparison

The three parts on the right have similar specifications to NAND512W3A2DZA6E.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Voltage - Supply

Terminal Position

Terminal Pitch

Base Part Number

Power Supplies

Memory Size

Nominal Supply Current

Memory Type

Memory Format

Memory Interface

Organization

Memory Width

Write Cycle Time - Word, Page

Address Bus Width

Density

Standby Current-Max

Access Time (Max)

Sync/Async

Word Size

Data Polling

Toggle Bit

Command User Interface

Number of Sectors/Size

Sector Size

Page Size

Ready/Busy

Radiation Hardening

RoHS Status

Published

JESD-609 Code

ECCN Code

Terminal Finish

HTS Code

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Time@Peak Reflow Temperature-Max (s)

Pin Count

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Programming Voltage

Write Cycle Time-Max (tWC)

Height Seated (Max)

Length

REACH SVHC

Pbfree Code

Qualification Status

Operating Supply Voltage

View Compare
NAND512W3A2DZA6E

Micron Technology Inc.

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

Obsolete

3 (168 Hours)

63

FLASH - NAND

2.7V~3.6V

BOTTOM

0.8mm

NAND512-A

3/3.3V

512Mb 64M x 8

30mA

Non-Volatile

FLASH

Parallel

64MX8

8

50ns

26b

512 Mb

0.00005A

35 ns

Asynchronous

8b

NO

NO

YES

4K

16K

512B

YES

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NAND01GW3B2CN6E

Micron Technology Inc.

Surface Mount

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

48

-40°C~85°C TA

Tray

Obsolete

3 (168 Hours)

48

FLASH - NAND

2.7V~3.6V

DUAL

0.5mm

NAND01G-A

3/3.3V

1Gb 128M x 8

30mA

Non-Volatile

FLASH

Parallel

128MX8

8

25ns

28b

1 Gb

0.00005A

25000 ns

Asynchronous

8b

NO

NO

YES

1K

128K

2kB

YES

No

ROHS3 Compliant

2008

e3

3A991.B.1.A

Matte Tin (Sn)

8542.32.00.51

260

1

3V

30

48

3.6V

2.7V

3V

25ms

1.2mm

18.4mm

No SVHC

-

-

-

NAND512W3A2DZA6E vs NAND01GW3B2CN6E
NAND01GW3B2BZA6E

Micron Technology Inc.

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

Obsolete

3 (168 Hours)

63

FLASH - NAND

2.7V~3.6V

BOTTOM

0.8mm

NAND01G-A

3/3.3V

1Gb 128M x 8

30mA

Non-Volatile

FLASH

Parallel

128MX8

8

30ns

28b

1 Gb

0.00005A

20 ns

Asynchronous

8b

NO

NO

YES

1K

128K

2Kwords

YES

-

ROHS3 Compliant

2004

e1

3A991.B.1.A

TIN SILVER COPPER

8542.32.00.51

260

1

3V

30

63

3.6V

2.7V

3V

-

1.05mm

12mm

-

yes

Not Qualified

-

NAND512W3A2DZA6E vs NAND01GW3B2BZA6E
NAND02GR3B2DZA6E

Micron Technology Inc.

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

Discontinued

3 (168 Hours)

63

FLASH - NAND

1.7V~1.95V

BOTTOM

0.8mm

NAND02G

-

2Gb 256M x 8

20mA

Non-Volatile

FLASH

Parallel

256MX8

8

45ns

8b

2 Gb

0.00005A

25000 ns

Asynchronous

8b

NO

NO

YES

2K

128K

2kB

YES

No

ROHS3 Compliant

2008

e1

3A991.B.1.A

TIN SILVER COPPER

8542.32.00.51

260

1

1.8V

30

63

1.95V

1.7V

-

-

1.05mm

11mm

-

-

-

1.8V

NAND512W3A2DZA6E vs NAND02GR3B2DZA6E