NAND512R3A2SE06

Micron Technology Inc. NAND512R3A2SE06

Part Number:
NAND512R3A2SE06
Manufacturer:
Micron Technology Inc.
Ventron No:
3837339-NAND512R3A2SE06
Description:
IC FLASH 512MBIT
ECAD Model:
Datasheet:
NAND512R3A2SE06

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Micron Technology Inc. NAND512R3A2SE06 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. NAND512R3A2SE06.
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Bulk
  • Published
    2013
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Max Operating Temperature
    85°C
  • Min Operating Temperature
    -40°C
  • Technology
    FLASH - NAND
  • Voltage - Supply
    1.7V~1.95V
  • Interface
    Parallel
  • Memory Size
    512Mb 64M x 8
  • Memory Type
    Non-Volatile
  • Access Time
    50ns
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • Write Cycle Time - Word, Page
    50ns
  • RoHS Status
    ROHS3 Compliant
Description
NAND512R3A2SE06 Overview
Non-Volatile is its memory type. It is available in a case with a Bulk shape. There is an 512Mb 64M x 8 memory capacity on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.7V~1.95V is possible to be applied to the supply. A minimum operating temperature of -40°C must be met by this device. As a general rule, memory ics is recommended that the product be operated at temperatures no higher than 85°Cc, otherwise, damage could be done to it.

NAND512R3A2SE06 Features
The operating temperature of this device is -40°C to 85°C, making it suitable for use in a wide range of environments. It is packaged in bulk, meaning it is not individually packaged but rather sold in larger quantities. The Moisture Sensitivity Level (MSL) is 3, which means it can withstand exposure to moisture for up to 168 hours. The maximum operating temperature is 85°C, ensuring the device can function at high temperatures without damage. This device uses the FLASH - NAND technology, which allows for fast data transfer and reliability. The interface is parallel, allowing for multiple data bits to be transferred simultaneously. It is a non-volatile memory type, meaning it retains data even when power is turned off. The access time for this device is 50ns, ensuring quick and efficient data access. It is formatted as FLASH memory, which is known for its high speed and reliability. Additionally, this device is RoHS3 compliant, meaning it is free of hazardous substances and safe for the environment.

NAND512R3A2SE06 Applications
There are a lot of Micron Technology Inc.
NAND512R3A2SE06 Memory applications.


telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
NAND512R3A2SE06 More Descriptions
IC FLASH 4M SPI 30MHZ 8SOP
IC FLASH 512M PARALLEL
Product Comparison
The three parts on the right have similar specifications to NAND512R3A2SE06.
  • Image
    Part Number
    Manufacturer
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Voltage - Supply
    Interface
    Memory Size
    Memory Type
    Access Time
    Memory Format
    Memory Interface
    Write Cycle Time - Word, Page
    RoHS Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Supply Voltage-Max (Vsup)
    Power Supplies
    Supply Voltage-Min (Vsup)
    Nominal Supply Current
    Organization
    Memory Width
    Address Bus Width
    Density
    Standby Current-Max
    Access Time (Max)
    Sync/Async
    Word Size
    Programming Voltage
    Write Cycle Time-Max (tWC)
    Data Polling
    Toggle Bit
    Command User Interface
    Number of Sectors/Size
    Sector Size
    Page Size
    Ready/Busy
    Height Seated (Max)
    Length
    Radiation Hardening
    REACH SVHC
    Pbfree Code
    Qualification Status
    Operating Supply Voltage
    View Compare
  • NAND512R3A2SE06
    NAND512R3A2SE06
    -40°C~85°C TA
    Bulk
    2013
    Obsolete
    3 (168 Hours)
    85°C
    -40°C
    FLASH - NAND
    1.7V~1.95V
    Parallel
    512Mb 64M x 8
    Non-Volatile
    50ns
    FLASH
    Parallel
    50ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NAND01GW3B2CN6E
    -40°C~85°C TA
    Tray
    2008
    Obsolete
    3 (168 Hours)
    -
    -
    FLASH - NAND
    2.7V~3.6V
    -
    1Gb 128M x 8
    Non-Volatile
    -
    FLASH
    Parallel
    25ns
    ROHS3 Compliant
    Surface Mount
    Surface Mount
    48-TFSOP (0.724, 18.40mm Width)
    48
    e3
    48
    3A991.B.1.A
    Matte Tin (Sn)
    8542.32.00.51
    DUAL
    260
    1
    3V
    0.5mm
    30
    NAND01G-A
    48
    3.6V
    3/3.3V
    2.7V
    30mA
    128MX8
    8
    28b
    1 Gb
    0.00005A
    25000 ns
    Asynchronous
    8b
    3V
    25ms
    NO
    NO
    YES
    1K
    128K
    2kB
    YES
    1.2mm
    18.4mm
    No
    No SVHC
    -
    -
    -
  • NAND01GW3B2BZA6E
    -40°C~85°C TA
    Tray
    2004
    Obsolete
    3 (168 Hours)
    -
    -
    FLASH - NAND
    2.7V~3.6V
    -
    1Gb 128M x 8
    Non-Volatile
    -
    FLASH
    Parallel
    30ns
    ROHS3 Compliant
    Surface Mount
    Surface Mount
    63-TFBGA
    63
    e1
    63
    3A991.B.1.A
    TIN SILVER COPPER
    8542.32.00.51
    BOTTOM
    260
    1
    3V
    0.8mm
    30
    NAND01G-A
    63
    3.6V
    3/3.3V
    2.7V
    30mA
    128MX8
    8
    28b
    1 Gb
    0.00005A
    20 ns
    Asynchronous
    8b
    3V
    -
    NO
    NO
    YES
    1K
    128K
    2Kwords
    YES
    1.05mm
    12mm
    -
    -
    yes
    Not Qualified
    -
  • NAND02GR3B2DZA6E
    -40°C~85°C TA
    Tray
    2008
    Discontinued
    3 (168 Hours)
    -
    -
    FLASH - NAND
    1.7V~1.95V
    -
    2Gb 256M x 8
    Non-Volatile
    -
    FLASH
    Parallel
    45ns
    ROHS3 Compliant
    Surface Mount
    Surface Mount
    63-TFBGA
    63
    e1
    63
    3A991.B.1.A
    TIN SILVER COPPER
    8542.32.00.51
    BOTTOM
    260
    1
    1.8V
    0.8mm
    30
    NAND02G
    63
    1.95V
    -
    1.7V
    20mA
    256MX8
    8
    8b
    2 Gb
    0.00005A
    25000 ns
    Asynchronous
    8b
    -
    -
    NO
    NO
    YES
    2K
    128K
    2kB
    YES
    1.05mm
    11mm
    No
    -
    -
    -
    1.8V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.