Micron Technology Inc. NAND512R3A2SE06
- Part Number:
- NAND512R3A2SE06
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3837339-NAND512R3A2SE06
- Description:
- IC FLASH 512MBIT
- Datasheet:
- NAND512R3A2SE06
Micron Technology Inc. NAND512R3A2SE06 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. NAND512R3A2SE06.
- Operating Temperature-40°C~85°C TA
- PackagingBulk
- Published2013
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Max Operating Temperature85°C
- Min Operating Temperature-40°C
- TechnologyFLASH - NAND
- Voltage - Supply1.7V~1.95V
- InterfaceParallel
- Memory Size512Mb 64M x 8
- Memory TypeNon-Volatile
- Access Time50ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Write Cycle Time - Word, Page50ns
- RoHS StatusROHS3 Compliant
NAND512R3A2SE06 Overview
Non-Volatile is its memory type. It is available in a case with a Bulk shape. There is an 512Mb 64M x 8 memory capacity on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.7V~1.95V is possible to be applied to the supply. A minimum operating temperature of -40°C must be met by this device. As a general rule, memory ics is recommended that the product be operated at temperatures no higher than 85°Cc, otherwise, damage could be done to it.
NAND512R3A2SE06 Features
The operating temperature of this device is -40°C to 85°C, making it suitable for use in a wide range of environments. It is packaged in bulk, meaning it is not individually packaged but rather sold in larger quantities. The Moisture Sensitivity Level (MSL) is 3, which means it can withstand exposure to moisture for up to 168 hours. The maximum operating temperature is 85°C, ensuring the device can function at high temperatures without damage. This device uses the FLASH - NAND technology, which allows for fast data transfer and reliability. The interface is parallel, allowing for multiple data bits to be transferred simultaneously. It is a non-volatile memory type, meaning it retains data even when power is turned off. The access time for this device is 50ns, ensuring quick and efficient data access. It is formatted as FLASH memory, which is known for its high speed and reliability. Additionally, this device is RoHS3 compliant, meaning it is free of hazardous substances and safe for the environment.
NAND512R3A2SE06 Applications
There are a lot of Micron Technology Inc.
NAND512R3A2SE06 Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Non-Volatile is its memory type. It is available in a case with a Bulk shape. There is an 512Mb 64M x 8 memory capacity on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.7V~1.95V is possible to be applied to the supply. A minimum operating temperature of -40°C must be met by this device. As a general rule, memory ics is recommended that the product be operated at temperatures no higher than 85°Cc, otherwise, damage could be done to it.
NAND512R3A2SE06 Features
The operating temperature of this device is -40°C to 85°C, making it suitable for use in a wide range of environments. It is packaged in bulk, meaning it is not individually packaged but rather sold in larger quantities. The Moisture Sensitivity Level (MSL) is 3, which means it can withstand exposure to moisture for up to 168 hours. The maximum operating temperature is 85°C, ensuring the device can function at high temperatures without damage. This device uses the FLASH - NAND technology, which allows for fast data transfer and reliability. The interface is parallel, allowing for multiple data bits to be transferred simultaneously. It is a non-volatile memory type, meaning it retains data even when power is turned off. The access time for this device is 50ns, ensuring quick and efficient data access. It is formatted as FLASH memory, which is known for its high speed and reliability. Additionally, this device is RoHS3 compliant, meaning it is free of hazardous substances and safe for the environment.
NAND512R3A2SE06 Applications
There are a lot of Micron Technology Inc.
NAND512R3A2SE06 Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
NAND512R3A2SE06 More Descriptions
IC FLASH 4M SPI 30MHZ 8SOP
IC FLASH 512M PARALLEL
IC FLASH 512M PARALLEL
The three parts on the right have similar specifications to NAND512R3A2SE06.
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ImagePart NumberManufacturerOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyVoltage - SupplyInterfaceMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusMountMounting TypePackage / CaseNumber of PinsJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishHTS CodeTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Nominal Supply CurrentOrganizationMemory WidthAddress Bus WidthDensityStandby Current-MaxAccess Time (Max)Sync/AsyncWord SizeProgramming VoltageWrite Cycle Time-Max (tWC)Data PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyHeight Seated (Max)LengthRadiation HardeningREACH SVHCPbfree CodeQualification StatusOperating Supply VoltageView Compare
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NAND512R3A2SE06-40°C~85°C TABulk2013Obsolete3 (168 Hours)85°C-40°CFLASH - NAND1.7V~1.95VParallel512Mb 64M x 8Non-Volatile50nsFLASHParallel50nsROHS3 Compliant----------------------------------------------
-
-40°C~85°C TATray2008Obsolete3 (168 Hours)--FLASH - NAND2.7V~3.6V-1Gb 128M x 8Non-Volatile-FLASHParallel25nsROHS3 CompliantSurface MountSurface Mount48-TFSOP (0.724, 18.40mm Width)48e3483A991.B.1.AMatte Tin (Sn)8542.32.00.51DUAL26013V0.5mm30NAND01G-A483.6V3/3.3V2.7V30mA128MX8828b1 Gb0.00005A25000 nsAsynchronous8b3V25msNONOYES1K128K2kBYES1.2mm18.4mmNoNo SVHC---
-
-40°C~85°C TATray2004Obsolete3 (168 Hours)--FLASH - NAND2.7V~3.6V-1Gb 128M x 8Non-Volatile-FLASHParallel30nsROHS3 CompliantSurface MountSurface Mount63-TFBGA63e1633A991.B.1.ATIN SILVER COPPER8542.32.00.51BOTTOM26013V0.8mm30NAND01G-A633.6V3/3.3V2.7V30mA128MX8828b1 Gb0.00005A20 nsAsynchronous8b3V-NONOYES1K128K2KwordsYES1.05mm12mm--yesNot Qualified-
-
-40°C~85°C TATray2008Discontinued3 (168 Hours)--FLASH - NAND1.7V~1.95V-2Gb 256M x 8Non-Volatile-FLASHParallel45nsROHS3 CompliantSurface MountSurface Mount63-TFBGA63e1633A991.B.1.ATIN SILVER COPPER8542.32.00.51BOTTOM26011.8V0.8mm30NAND02G631.95V-1.7V20mA256MX888b2 Gb0.00005A25000 nsAsynchronous8b--NONOYES2K128K2kBYES1.05mm11mmNo---1.8V
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