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NAND512R3A2BZA6E

STMicroelectronics NAND512R3A2BZA6E

Part Number:
NAND512R3A2BZA6E
Manufacturer:
STMicroelectronics
Ventron No:
3725427-NAND512R3A2BZA6E
Description:
IC FLASH 512MBIT 60NS 63VFBGA
ECAD Model:
Datasheet:
NAND128/256/512/01G-A (V7.0)

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Specifications
STMicroelectronics NAND512R3A2BZA6E technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics NAND512R3A2BZA6E.
  • Mounting Type
    Surface Mount
  • Package / Case
    63-VFBGA
  • Surface Mount
    YES
  • Number of Pins
    55
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    63
  • ECCN Code
    3A991.B.1.A
  • HTS Code
    8542.32.00.51
  • Technology
    FLASH - NAND
  • Voltage - Supply
    1.7V~1.95V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Number of Functions
    1
  • Supply Voltage
    1.8V
  • Terminal Pitch
    0.8mm
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    NAND512
  • Pin Count
    63
  • JESD-30 Code
    R-PBGA-B63
  • Qualification Status
    Not Qualified
  • Supply Voltage-Max (Vsup)
    1.95V
  • Power Supplies
    1.8V
  • Supply Voltage-Min (Vsup)
    1.7V
  • Memory Size
    512Mb 64M x 8
  • Memory Type
    Non-Volatile
  • Operating Mode
    ASYNCHRONOUS
  • Supply Current-Max
    0.015mA
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • Data Bus Width
    8b
  • Organization
    64MX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    60ns
  • Standby Current-Max
    0.00005A
  • Memory Density
    536870912 bit
  • Access Time (Max)
    15000 ns
  • Programming Voltage
    1.8V
  • Data Polling
    NO
  • Toggle Bit
    NO
  • Command User Interface
    YES
  • Number of Sectors/Size
    4K
  • Sector Size
    16K
  • Page Size
    512words
  • Ready/Busy
    YES
  • Height Seated (Max)
    1.05mm
  • Length
    11mm
  • RoHS Status
    ROHS3 Compliant
Description
NAND512R3A2BZA6E Overview
This product has 55 pins and falls under the ECCN Code 3A991.B.1.A. It requires a power supply of 1.8V and has a minimum supply voltage of 1.7V. The operating mode is asynchronous and it has an organization of 64MX8. The memory width is 8 and the write cycle time for both word and page is 60ns. The programming voltage is 1.8V and the sector size is 16K.

NAND512R3A2BZA6E Features
Package / Case: 63-VFBGA
55 Pins


NAND512R3A2BZA6E Applications
There are a lot of STMicroelectronics
NAND512R3A2BZA6E Memory applications.


telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
NAND512R3A2BZA6E More Descriptions
Flash, 64MX8, 15000ns, PBGA63
IC FLSH 512MBIT PARALLEL 63VFBGA
1.8V V 63 Pin Memory IC NAND512 11mm mm
NAND Flash 128Mbit-1Gbit 1.8/3V
Product Comparison
The three parts on the right have similar specifications to NAND512R3A2BZA6E.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    HTS Code
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Supply Voltage-Max (Vsup)
    Power Supplies
    Supply Voltage-Min (Vsup)
    Memory Size
    Memory Type
    Operating Mode
    Supply Current-Max
    Memory Format
    Memory Interface
    Data Bus Width
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Standby Current-Max
    Memory Density
    Access Time (Max)
    Programming Voltage
    Data Polling
    Toggle Bit
    Command User Interface
    Number of Sectors/Size
    Sector Size
    Page Size
    Ready/Busy
    Height Seated (Max)
    Length
    RoHS Status
    Mount
    Published
    JESD-609 Code
    Terminal Finish
    Nominal Supply Current
    Address Bus Width
    Density
    Sync/Async
    Word Size
    Write Cycle Time-Max (tWC)
    Radiation Hardening
    REACH SVHC
    Pbfree Code
    Operating Supply Voltage
    View Compare
  • NAND512R3A2BZA6E
    NAND512R3A2BZA6E
    STMicroelectronics
    Surface Mount
    63-VFBGA
    YES
    55
    -40°C~85°C TA
    Tray
    Obsolete
    3 (168 Hours)
    63
    3A991.B.1.A
    8542.32.00.51
    FLASH - NAND
    1.7V~1.95V
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    0.8mm
    NOT SPECIFIED
    NAND512
    63
    R-PBGA-B63
    Not Qualified
    1.95V
    1.8V
    1.7V
    512Mb 64M x 8
    Non-Volatile
    ASYNCHRONOUS
    0.015mA
    FLASH
    Parallel
    8b
    64MX8
    8
    60ns
    0.00005A
    536870912 bit
    15000 ns
    1.8V
    NO
    NO
    YES
    4K
    16K
    512words
    YES
    1.05mm
    11mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NAND01GW3B2CN6E
    NAND01GW3B2CN6E
    Micron Technology Inc.
    Surface Mount
    48-TFSOP (0.724, 18.40mm Width)
    -
    48
    -40°C~85°C TA
    Tray
    Obsolete
    3 (168 Hours)
    48
    3A991.B.1.A
    8542.32.00.51
    FLASH - NAND
    2.7V~3.6V
    DUAL
    260
    1
    3V
    0.5mm
    30
    NAND01G-A
    48
    -
    -
    3.6V
    3/3.3V
    2.7V
    1Gb 128M x 8
    Non-Volatile
    -
    -
    FLASH
    Parallel
    -
    128MX8
    8
    25ns
    0.00005A
    -
    25000 ns
    3V
    NO
    NO
    YES
    1K
    128K
    2kB
    YES
    1.2mm
    18.4mm
    ROHS3 Compliant
    Surface Mount
    2008
    e3
    Matte Tin (Sn)
    30mA
    28b
    1 Gb
    Asynchronous
    8b
    25ms
    No
    No SVHC
    -
    -
    NAND512R3A2BZA6E vs NAND01GW3B2CN6E
  • NAND01GW3B2BZA6E
    NAND01GW3B2BZA6E
    Micron Technology Inc.
    Surface Mount
    63-TFBGA
    -
    63
    -40°C~85°C TA
    Tray
    Obsolete
    3 (168 Hours)
    63
    3A991.B.1.A
    8542.32.00.51
    FLASH - NAND
    2.7V~3.6V
    BOTTOM
    260
    1
    3V
    0.8mm
    30
    NAND01G-A
    63
    -
    Not Qualified
    3.6V
    3/3.3V
    2.7V
    1Gb 128M x 8
    Non-Volatile
    -
    -
    FLASH
    Parallel
    -
    128MX8
    8
    30ns
    0.00005A
    -
    20 ns
    3V
    NO
    NO
    YES
    1K
    128K
    2Kwords
    YES
    1.05mm
    12mm
    ROHS3 Compliant
    Surface Mount
    2004
    e1
    TIN SILVER COPPER
    30mA
    28b
    1 Gb
    Asynchronous
    8b
    -
    -
    -
    yes
    -
    NAND512R3A2BZA6E vs NAND01GW3B2BZA6E
  • NAND02GR3B2DZA6E
    NAND02GR3B2DZA6E
    Micron Technology Inc.
    Surface Mount
    63-TFBGA
    -
    63
    -40°C~85°C TA
    Tray
    Discontinued
    3 (168 Hours)
    63
    3A991.B.1.A
    8542.32.00.51
    FLASH - NAND
    1.7V~1.95V
    BOTTOM
    260
    1
    1.8V
    0.8mm
    30
    NAND02G
    63
    -
    -
    1.95V
    -
    1.7V
    2Gb 256M x 8
    Non-Volatile
    -
    -
    FLASH
    Parallel
    -
    256MX8
    8
    45ns
    0.00005A
    -
    25000 ns
    -
    NO
    NO
    YES
    2K
    128K
    2kB
    YES
    1.05mm
    11mm
    ROHS3 Compliant
    Surface Mount
    2008
    e1
    TIN SILVER COPPER
    20mA
    8b
    2 Gb
    Asynchronous
    8b
    -
    No
    -
    -
    1.8V
    NAND512R3A2BZA6E vs NAND02GR3B2DZA6E
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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