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MWI35-12A7

IXYS MWI35-12A7

Part Number:
MWI35-12A7
Manufacturer:
IXYS
Ventron No:
3071962-MWI35-12A7
Description:
MOD IGBT SIXPACK RBSOA 1200V E2
ECAD Model:
Datasheet:
MWI35-12A7 ~

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Specifications
IXYS MWI35-12A7 technical specifications, attributes, parameters and parts with similar specifications to IXYS MWI35-12A7.
  • Factory Lead Time
    16 Weeks
  • Mount
    Chassis Mount, Through Hole
  • Mounting Type
    Chassis Mount
  • Package / Case
    E2
  • Number of Pins
    2
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -40°C~150°C TJ
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    11
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    UL RECOGNIZED
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    280W
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Base Part Number
    MWI
  • Pin Count
    17
  • JESD-30 Code
    R-XUFM-X11
  • Number of Elements
    6
  • Configuration
    Three Phase Inverter
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    100 ns
  • Power - Max
    280W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Input
    Standard
  • Turn-Off Delay Time
    500 ns
  • Collector Emitter Voltage (VCEO)
    2.8V
  • Max Collector Current
    62A
  • Current - Collector Cutoff (Max)
    2mA
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Input Capacitance
    2nF
  • Turn On Time
    180 ns
  • Vce(on) (Max) @ Vge, Ic
    2.8V @ 15V, 35A
  • Turn Off Time-Nom (toff)
    570 ns
  • IGBT Type
    NPT
  • NTC Thermistor
    No
  • Input Capacitance (Cies) @ Vce
    2nF @ 25V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MWI35-12A7 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet MWI35-12A7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MWI35-12A7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MWI35-12A7 More Descriptions
MWI35 Series 1200 Vce 62 A 100 ns t(on) IGBT Module SixPack
MOD IGBT SIXPACK RBSOA 1200V E2
IGBT MODULE 1200V 62A 280W E2
Contact for details
Product Comparison
The three parts on the right have similar specifications to MWI35-12A7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Case Connection
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Input
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Current - Collector Cutoff (Max)
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Input Capacitance
    Turn On Time
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    NTC Thermistor
    Input Capacitance (Cies) @ Vce
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Gate-Emitter Voltage-Max
    Packaging
    Collector Emitter Saturation Voltage
    Height
    Length
    Width
    View Compare
  • MWI35-12A7
    MWI35-12A7
    IXYS
    16 Weeks
    Chassis Mount, Through Hole
    Chassis Mount
    E2
    2
    SILICON
    -40°C~150°C TJ
    2007
    e3
    yes
    Active
    1 (Unlimited)
    11
    Matte Tin (Sn) - with Nickel (Ni) barrier
    UL RECOGNIZED
    Insulated Gate BIP Transistors
    280W
    UPPER
    UNSPECIFIED
    MWI
    17
    R-XUFM-X11
    6
    Three Phase Inverter
    ISOLATED
    100 ns
    280W
    POWER CONTROL
    N-CHANNEL
    Standard
    500 ns
    2.8V
    62A
    2mA
    1.2kV
    1200V
    2nF
    180 ns
    2.8V @ 15V, 35A
    570 ns
    NPT
    No
    2nF @ 25V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MWI300-17E9
    MWI300-17E9
    IXYS
    16 Weeks
    Chassis Mount
    Chassis Mount
    E
    29
    SILICON
    -40°C~125°C TJ
    2007
    e3
    yes
    Active
    1 (Unlimited)
    17
    Matte Tin (Sn) - with Nickel (Ni) barrier
    -
    Insulated Gate BIP Transistors
    2.2kW
    UPPER
    UNSPECIFIED
    MWI
    29
    R-XUFM-X17
    6
    Three Phase
    ISOLATED
    -
    2200W
    POWER CONTROL
    N-CHANNEL
    Standard
    -
    2.7V
    500A
    1mA
    1.7kV
    1700V
    33nF
    290 ns
    2.7V @ 15V, 300A
    610 ns
    NPT
    Yes
    33nF @ 25V
    ROHS3 Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    20V
    -
    -
    -
    -
    -
    MWI35-12A7 vs MWI300-17E9
  • MWI30-06A7T
    MWI30-06A7T
    IXYS
    20 Weeks
    Chassis Mount
    Chassis Mount
    E2
    18
    SILICON
    -40°C~150°C TJ
    2007
    e3
    yes
    Active
    1 (Unlimited)
    13
    Matte Tin (Sn) - with Nickel (Ni) barrier
    UL RECOGNIZED
    Insulated Gate BIP Transistors
    140W
    UPPER
    UNSPECIFIED
    MWI
    19
    R-XUFM-X13
    6
    Three Phase Inverter
    ISOLATED
    -
    140W
    POWER CONTROL
    N-CHANNEL
    Standard
    -
    2.4V
    45A
    600μA
    600V
    -
    1.6nF
    100 ns
    2.4V @ 15V, 30A
    310 ns
    NPT
    Yes
    1.6nF @ 25V
    ROHS3 Compliant
    Lead Free
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    20V
    Bulk
    600V
    17mm
    107.5mm
    45mm
    MWI35-12A7 vs MWI30-06A7T
  • MWI30-06A7
    MWI30-06A7
    IXYS
    20 Weeks
    Chassis Mount, Screw
    Chassis Mount
    E2
    2
    SILICON
    -40°C~150°C TJ
    2007
    e3
    yes
    Active
    1 (Unlimited)
    11
    Matte Tin (Sn) - with Nickel (Ni) barrier
    UL RECOGNIZED
    Insulated Gate BIP Transistors
    140W
    UPPER
    UNSPECIFIED
    MWI
    17
    R-XUFM-X11
    6
    Three Phase Inverter
    ISOLATED
    -
    140W
    POWER CONTROL
    N-CHANNEL
    Standard
    -
    2.4V
    45A
    600μA
    600V
    -
    1.6nF
    100 ns
    2.4V @ 15V, 30A
    310 ns
    NPT
    No
    1.6nF @ 25V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    17mm
    107.5mm
    45mm
    MWI35-12A7 vs MWI30-06A7
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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